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Showing 1 to 6 of 6 for “"ultrawide bandgap"”.
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Power Electronics Based on Ultrawide Bandgap Semiconductors: from Material Engineering to Device Applications
This work demonstrates high-performance BN/β-Ga2O3 metal-insulator-semiconductor Schottky barrier diodes (MIS SBDs). The BN layer is directly grown on the β-Ga2O3 by pulsed laser deposition (PLD). The presence of a ~2.8 nm BN layer is confirmed by a series of techniques, including X-ray …
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Enhancing Stability in Quantum-Dot and Perovskite Optoelectronic Devices through Compositional Engineering and Surface Treatment
… traps and unfavorable band alignment in ultrawide-bandgap perovskite solar cells, a sublayer relevant to triple-junction solar cells. I find that a bifunctional molecule, positioned at a buried interface, simultaneously passivates traps and improves energy alignment, reclaiming ~30 mV of …
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Deep elastic strain engineering of materials electronic properties by machine learning
… electronic properties such as band structure, bandgap, band extrema location, and effective mass, as well as other properties with minor modifications. It is also used for discovering indirect-to-direct bandgap transition that would benefit photon emission and absorption in a semiconductor such …
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Advancements in Hexagonal Boron Nitride for Thermal Neutron Detection Applications
… Some of these properties include extremely wide bandgap, strong optical absorption of above bandgap photons, a layered structure with a close lattice match to graphite, and critical to this research effort, a large thermal neutron capture cross section when 100% isotopically enriched with 10B. …
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Electro-Thermal Device-Package Co-Design for a High-Temperature Ultra-Wide-Bandgap Gallium-Oxide Power Module
… carrier concentration, dictated primarily by the bandgap of the material, which increases with temperature. Wide-bandgap (WBG) power semiconductors, primarily silicon carbide (SiC) and gallium nitride (GaN), have been adopted for use in these applications, but exhibit a degradation in performance …
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Epitaxial Gallium Oxide Heterojunctions for Vertical Power Rectifiers
… to fruition as the performance limits of narrow bandgap (EG) materials such as Si (1.1 eV) have been reached. The EG is a key measure of a materials ability to operate at high voltages and within high temperature environments. This is due to the direct relationship of the EG to the critical field …