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Showing 1 to 1 of 1 for “"ultra wide bandgap heterojunction"”.
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Band Offset Measurements of ε-(InxGa1-x)2O3/AlN using X-ray Photoelectron Spectroscopy
… advanced electronic applications, such as deep ultraviolet photodetectors, high-electron-mobility transistors, and high-power electronic devices, InGaO/AlN heterojunctions hold significant promise due to their ultra-wide band gap, tunable polarization properties, and optimized spectral response. …