Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 10 of 10 for “"tunneling diodes"”.
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Design of resonant-tunneling diodes for a GaAs integrated SRAM
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
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AC behavior of resonant-tunneling diodes in the scattering-dominated regime
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
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The characterization of aluminum gallium arsenide resonant tunneling diodes at microwave frequencies
Double-barrier, single-quantum-well, resonant tunneling diodes employing variable thickness Al$\sb{0.25}$Ga$\sb{0.75}$As barriers and 5 nm GaAs wells have been studied. Low doped GaAs buffer regions ($N\sb D$ $\approx$ 5 $\times$ 10$\sp{16}$ cm$\sp{-3}$) were placed next to the barriers to reduce …
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Scaling to submicron for III-nitride optoelectronic devices: Applications in micro light emitting diodes and resonant tunneling diodes
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01
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Studies in the Wigner-Poisson and Schroedinger-Poisson Systems
… in semiconductor devices such as resonance tunneling diodes and quantum dots has lead to an intense study of the Wigner-Poisson (WP) and Schroedinger-Poisson (SP) systems. In this work we present the mathematical analysis of several related models for these systems. These include: a …
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Using imperfect semiconductor systems for unique identification
… the current‐voltage characteristics of Resonant Tunneling Diodes (RTDs) were found to provide a simple measurement of the underlying quantum state electronically. • Optically ‐ Macroscopic thin films of the two‐dimensional material, MoS2, were created by the Langmuir‐Blodgett technique for the …
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Electronic devices based on 2D material: fabrication, characterization and analysis
… (such as metal-oxide field effect transistors, tunneling field effect transistor, and resonant tunneling diodes) based on BP.
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Novel RTD-Based Threshold Logic Design and Verification
… Among the emerging nanodevices, resonant tunneling diodes (RTDs) have demonstrated promising electronic features due to their high speed switching capability and functional versatility. Great circuit functionality can be achieved through integrating heterostructure field-effect transistors …
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Magnetotransport effects in lateral and vertical ferromagnetic semiconductor junctions
… investigation of giant magnetoresistance (GMR), tunneling magnetoresistance (TMR) and tunneling anisotropic magnetoresistance (TAMR)effects in (Ga,Mn) based ferromagnetic semiconductor junctions. Detailed results are published in the following articles: [1] C. Rüster, T. Borzenko, C. Gould, G. …
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Quantentransport in III-V-Halbleiternanosäulen
… of vertical GaAs/AlAs nanocolumn resonant tunneling diodes (RTDs) and field effect transistors (RTTs) as well as of vertical InAs nanocolumn phase interference diodes. Using new top-down processing methods, these devices have been miniaturized to a scale not reached until now. The devices …