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Showing 1 to 16 of 16 for “"tunneling conductance"”.

  1. Planar Tunneling and Andreev Bound State Spectroscopy of Yttrium Barium Copper Oxide Thin Films Using Solution-Deposited Zirconia Insulators

    … In doing so, various behaviors of the tunneling conductance and its dependence on magnetic field, temperature, and injected current as a function of these counter-electrode deposition techniques has been observed. Modeling of the tunneling conductance has provided insight into the …

    uiuc Repository record for Planar Tunneling and Andreev Bound State Spectroscopy of Yttrium Barium Copper Oxide Thin Films Using Solution-Deposited Zirconia Insulators (opens in a new tab)

  2. Planar Tunneling and Andreev Bound State Spectroscopy of YBa2Cu3O7- d Thin Films Using Solution-Deposited Zirconia Insulators

    … different crystallographic orientations. Since tunneling is a highly surface-sensitive probe on YBCO, films have been optimized for high surface quality. To fabricate the tunneling insulator, a novel fabrication technique has been developed through solution condensation and hydrolysis of …

    uiuc Repository record for Planar Tunneling and Andreev Bound State Spectroscopy of YBa2Cu3O7- d Thin Films Using Solution-Deposited Zirconia Insulators (opens in a new tab)

  3. Growth, transport, and tunneling spectroscopy of Y1̳-̳x̳Prx̳Ba2̳Cu3̳07̳ thin films as a function of crystallographic orientation

    The planar tunneling spectroscopy of superconducting, Pr-doped YBa2Cu301 thin films is reported. The tunneling conductance is studied as a function of both crystallographic orientation and Pr concentration. Tunnel junctions are fabricated on thin films grown by off-axis magnetron sputter deposition …

    uiuc Repository record for Growth, transport, and tunneling spectroscopy of Y1̳-̳x̳Prx̳Ba2̳Cu3̳07̳ thin films as a function of crystallographic orientation (opens in a new tab)

  4. Tunneling spectroscopy of the two-dimensional electron gas

    … the complete current-voltage characteristics for tunneling into the 2DES without making ohmic contacts to it. TDCS detects the tunneling current in regimes difficult to access by conventional methods, such as when the in-plane conductance is low. For the first time we detect the contributions of …

    mit Repository record for Tunneling spectroscopy of the two-dimensional electron gas (opens in a new tab)

  5. Planar Tunneling Spectroscopy of Thin-Film Niobium, Niobium/normal Metal and Niobium/semicondutor Structures

    … between these two materials was utilized as a tunneling barrier. A method was developed to fabricate small area junctions. The tunneling conductance as a function of semiconductor properties and sample temperature have been found to be consistent with results reported in the literature.

    uiuc Repository record for Planar Tunneling Spectroscopy of Thin-Film Niobium, Niobium/normal Metal and Niobium/semicondutor Structures (opens in a new tab)

  6. Growth, Transport, and Tunneling Spectroscopy of Y(1-X) Pr(x) Ba(2) Cu(3) O(7) Thin Films as a Function of Crystallographic Orientation

    The planar tunneling spectroscopy of superconducting, Pr-doped YBa$\rm\sb2Cu\sb3O\sb7$ thin films is reported. The tunneling conductance is studied as a function of both crystallographic orientation and Pr concentration. Tunnel junctions are fabricated on thin films grown by off-axis magnetron …

    uiuc Repository record for Growth, Transport, and Tunneling Spectroscopy of Y(1-X) Pr(x) Ba(2) Cu(3) O(7) Thin Films as a Function of Crystallographic Orientation (opens in a new tab)

  7. Effects of a single magnetic impurity on superconductivity

    … has been probed experimentally with scanning tunneling spectroscopy by Yazdani et al.. Motivated by their experiment, we study the ef- fects of a single magnetic impurity on superconductivity by means of the mean-¯eld Bogoliubov-de Gennes theory. The Bogoliubov-de Gennes equations are solved …

    sask Repository record for Effects of a single magnetic impurity on superconductivity (opens in a new tab)

  8. Scanning tunneling spectroscopy of lead-substituted bismuth strontium copper oxide

    … correlation with Pb location. Differential tunneling conductance is modeled using the van Hove scenario, wherein modulated regions are shown to have higher values of EVHS than flat regions. The consistency of parameters matching theoretical predictions to tunneling spectra suggest that EVHS …

    mit Repository record for Scanning tunneling spectroscopy of lead-substituted bismuth strontium copper oxide (opens in a new tab)

  9. Planar Tunneling Into YBCMO (M = Zinc, Nickel) Thin Films

    Planar tunneling spectroscopy of Zn and Ni-doped Y1Ba 2Cu3O7-delta thin films is reported. The tunneling conductance is studied as a function of crystallographic orientation, doping concentration, temperature and applied magnetic field. Tunnel junctions are fabricated with either Bi or Pb as a …

    uiuc Repository record for Planar Tunneling Into YBCMO (M = Zinc, Nickel) Thin Films (opens in a new tab)

  10. Single Electron Tunneling at Large Conductance

    In this dissertation I study electron tunneling in nanofabricated metallic structures. Specifically I consider systems containing metallic tunnel junctions that consist of two metallic electrodes separated by a thin oxide layer. Electrons in the leads are described by Fermi liquid theory and …

    freiburg-diss Repository record for Single Electron Tunneling at Large Conductance (opens in a new tab)

  11. Tunneling spectroscopy in p-type silicon

    Tunneling in boron doped p-type silicon metal-semiconductor and metal-insulator-semiconductor tunnel junctions has been studied at low temperatures by measuring the derivatives, di/dV and d2i/dV2, of the current-voltage characteristics as functions of applied bias voltage V. The junctions were …

    uiuc Repository record for Tunneling spectroscopy in p-type silicon (opens in a new tab)

  12. Planar tunneling spectroscopy of thin-film Nb, Nb/normal metal and Nb/semiconductor structures

    … between these two materials was utilized as a tunneling barrier. A method was developed to fabricate small area junctions. The tunneling conductance as a function of semiconductor properties and sample temperature have been found to be consistent with results reported in the literature.

    uiuc Repository record for Planar tunneling spectroscopy of thin-film Nb, Nb/normal metal and Nb/semiconductor structures (opens in a new tab)

  13. Scanning tunneling microscopy and spectroscopy of topological materials with broken symmetry

    … well established. In the first project, scanning tunneling spectroscopy was used to observe Landau quantization in thin films of (Bi1-xSbx)2Te3. By combining nanoscale imaging and spectroscopy, the sensitivity of the chemical potential to the chemical composition and thin film growth conditions …

    uiuc Repository record for Scanning tunneling microscopy and spectroscopy of topological materials with broken symmetry (opens in a new tab)

  14. An embedding green function approach for electron transport through interfaces

    … the Landauer model or Bardeen's formalism of tunneling. These two formulas are discussed as two different limits of single-particle transport and their reformulation in terms of quantities readily available from the embedding method is presented. The method was applied to a multilayer …

    aachen Repository record for An embedding green function approach for electron transport through interfaces (opens in a new tab)

  15. Extraction of Spin Polarization of Bulk and Measurement of Transport Properties of Thin GdxSi1-x Near the Metal-Insulator Transition

    … to extract the spin polarization from the tunneling conductance of superconducting aluminium with 3-dimensional (3-D) amorphous (a-) gadoliniumxsilicon1-x (GdxSi1-x) as a counter electrode (Al/Al2O3/a-GdxSi1-x planar tunnel junction measured at T = 25 mK and H less than or equal to 3.0 T) …

    tdl Repository record for Extraction of Spin Polarization of Bulk and Measurement of Transport Properties of Thin GdxSi1-x Near the Metal-Insulator Transition (opens in a new tab)

  16. Phenomenological phase-fluctuation model for the underdoped cuprates

    … of states was calculated. The quasiparticle tunneling conductance (dI/dV) obtained from our phenomenological phase fluctuation model was able to reproduce characteristic and salient features of recent scanning-tunneling studies of Bi2212 and Bi2201 suggesting that the pseudogap behavior …

    wurz-thes Repository record for Phenomenological phase-fluctuation model for the underdoped cuprates (opens in a new tab)