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Showing 1 to 4 of 4 for “"tunnel transistors"”.

  1. Band-to-band tunneling in silicon diodes and tunnel transistors

    … uniaxial strain on reverse-bias band-to-band tunneling current in n+/p+ vertical silicon diodes fabricated on {100} and {110} substrate orientations. The Band Structure Lab and nextnano are used to analyze the change in band structure with uniaxial stress applied perpendicular to the tunneling …

    mit Repository record for Band-to-band tunneling in silicon diodes and tunnel transistors (opens in a new tab)

  2. Prospects of germanium-based MOSFETs and tunnel transistors for low power digital logic

    … and steep subthreshold swing devices such as tunnel field effect transistors (TFETs). This work evaluates both approaches utilizing germanium (Ge) and strained-Ge as a material to understand the benefits and drawbacks to both approaches. Hypothetically, high carrier mobility and velocity …

    mit Repository record for Prospects of germanium-based MOSFETs and tunnel transistors for low power digital logic (opens in a new tab)

  3. MODELING QUANTUM AND COULOMB EFFECTS IN NANOSCALE ENHANCEMENT-MODE TRI-GATE III-V MOSFETs

    … use in quantum-mechanical devices (such as tunnel transistors), in spin-FET devices, and in qubits and memory cells. However, there are several challenges (such as, low ION/IOFF ratio) associated with III-V MOSFETs that prohibit their use in high- performance and low-power logic …

    siu-theses Repository record for MODELING QUANTUM AND COULOMB EFFECTS IN NANOSCALE ENHANCEMENT-MODE TRI-GATE III-V MOSFETs (opens in a new tab)

  4. Energy relaxation and thermal rectification in carbon devices

    … the physics of energy relaxation in nanoscale transistors based on new popular materials like carbon nanotubes and graphene nanoribbons. The results hold significance for the design of future low power nanoscale devices and show that tunnel devices based on carbon nanotubes with a band gap less …

    uiuc Repository record for Energy relaxation and thermal rectification in carbon devices (opens in a new tab)