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Showing 1 to 7 of 7 for “"tunnel diodes"”.

  1. Application of Tunnel Diodes in Linear Network Synthesis

    Made available in DSpace on 2014-12-04T21:03:27Z (GMT). No. of bitstreams: 1 6202970.pdf: 2832088 bytes, checksum: 3c7b7551779e6661531a56ea940304d3 (MD5) Previous issue date: 1962

    uiuc Repository record for Application of Tunnel Diodes in Linear Network Synthesis (opens in a new tab)

  2. Theory of electron transport processes in tunnel diodes

    A unified theory of conduction processes in tunnel diodes is presented. The use of Fermi-Dirac distributions in non-equilibrium tunneling integrals is justified. The direct tunneling mechanism is examined from two points of view and is shown to be described about equally well by either. In …

    uiuc Repository record for Theory of electron transport processes in tunnel diodes (opens in a new tab)

  3. Antenna-coupled Tunnel Diodes For Dual-band Millimeter-wave/infrared F

    … coupling radiation into metal-oxide-metal (MOM) tunnel diodes at both frequencies. The MOM diodes are fabricated in a layered structure of Ni-NiO-Ni, and act as rectifying contacts. With contact areas as low as 120 nm × 120 nm, these diodes have time constants commensurate with …

    ucf

  4. Wide-Bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices

    … devices. Wide-bandgap GaN homojunction tunnel junctions are investigated to enhance shorter wavelength optoelectronics. Extreme n- and p-type doping is established with carrier concentrations above 1x1020 cm-3, which is essential to form tunnel junctions in such a wide bandgap material. …

    gatech Repository record for Wide-Bandgap III-Nitride Tunnel Junctions and Novel Approaches towards Improving Optoelectronic Devices (opens in a new tab)

  5. N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP

    … from the 1st and 2nd generation GaN homojunction tunnel diodes, contributing to the fabrication of MOS capacitors on p-type GaN (0001) substrate for interface quality studies. Lastly, recommendations for optimized device design are provided based on literature survey.

    cornell Repository record for N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP (opens in a new tab)

  6. A microscopic theory of tunneling

    "A microscopic theory of impurity-assisted tunneling is constructed in which the current-carrying (extended) eigenstates of the average one electron potential in a tunnel junction are utilized as the basis functions which are mixed by the Hamiltonian associated with the presence of a static or …

    uiuc Repository record for A microscopic theory of tunneling (opens in a new tab)