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Showing 1 to 5 of 5 for “"tunnel FET"”.

  1. First principles modelling of tunnel field-effect transistors based on heterojunctions of strained Germanium/InGaAs alloys

    … (MOS) field-effect transistor (FET) and the demand for energy-efficient appliances motivate the study of alternative devices. The device under consideration is the biaxial tensile-strained Germanium on InGaAs alloy tunnel FET (TFET). The type of device depends on the band …

    qu-belfast Repository record for First principles modelling of tunnel field-effect transistors based on heterojunctions of strained Germanium/InGaAs alloys (opens in a new tab)

  2. Electronic structure, defect formation and passivation of 2D materials

    … which are candidates in the n-type part of a tunnel FET. We found that these two materials have high mobility but there are also intrinsic defects including the S vacancy, S interstitial, and Hf/Sn interstitial. Finally, we study how to make defect states chemically inactive, namely …

    cambridge Repository record for Electronic structure, defect formation and passivation of 2D materials (opens in a new tab)

  3. InGaAs/GaAsSb quantum-well Tunnel-FETs for ultra-low power applications

    The Tunnel-FET (TFET), where carrier injection is determined by gate-controlled tunneling from the source to the channel, has been attractive as one of the promising candidates for future ultra-low power applications. In this thesis, inline-TFETs with tunneling direction aligned to the gate …

    mit Repository record for InGaAs/GaAsSb quantum-well Tunnel-FETs for ultra-low power applications (opens in a new tab)

  4. Silicon Nanoelectronics for Quantum Metrology Standard and Cryogenic SBMOSFET

    … MOS Field-Effect-Transistor (SBMOSFET) for the signal amplification of silicon quantum electronic devices at cryogenic temperature. We found the SBMOSFET operated as a p-MOS tunnel-FET at low temperature. Based on the electric field calculated through the commercial software TCAD, …

    unsw Repository record for Silicon Nanoelectronics for Quantum Metrology Standard and Cryogenic SBMOSFET (opens in a new tab)

  5. AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework

    … candidates, two-dimensional (2D) materials-based tunnel FETs (TFETs) are especially in the spotlight nowadays. In this dissertation, we provide insights/guidelines on designing 2D materials-based TFETs using a first-principles multiphysics framework coupling density functional theory (DFT) and …

    uiuc Repository record for AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework (opens in a new tab)