Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"tri-gate"”.
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MODELING QUANTUM AND COULOMB EFFECTS IN NANOSCALE ENHANCEMENT-MODE TRI-GATE III-V MOSFETs
… such as ALD, layer transfer, high-k dielectrics, and metal gates are now being used to explore these MOSFETs. III-V materials are also being investigated for possible use in quantum-mechanical devices (such as tunnel transistors), in spin-FET devices, and in qubits and memory cells. …
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Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications
… planar MOSFET to be modified to a 3-D Tri-gate architecture which provides fully depleted characteristics by increasing the inversion layer area and hence, providing superior electrostatic control of the device channel to address short channel effects such as subthreshold slope (SS) and …
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AlGaN/GaN-based power semiconductor switches
… switches, thanks to their high breakdown electric field, mobility and charge density. The ability to grow these devices on large-diameter Si wafers also reduces device cost and makes them easier for wide market adoption. However, the development of AlGaN/GaN-based power switches has …
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Selective lateral nano-epitaxy for manufacturable nanowire electronics
… 3D nature which facilitates realization of multi-gate field effect transistors (FETs). VLS growth, where a metallic seed nanoparticle is used to gather materials and guide nanowire growth, is a unique bottom-up method suitable for synthesizing extremely thin nanowires with high aspect ratios and …
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Modelling of Multichannel GaN Transistors
The Gallium Nitride High Electron Mobility Transistor (GaN HEMT) is the representative GaN-based wide bandgap semiconductor device. It has been one of the most promising research topics due to its excellent electronic properties in high power, high frequency and high temperature applications. The …
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Statistical modeling and simulation of variability and reliability of CMOS technology
<p>The introduction of High-κ Metal Gate transistors led to higher integration density, low leakage current, and faster switching speed. However, this transition in technology roadmap brought about new failure mechanisms such as Positive Bias Temperature Instability and Stress Induced Leakage …
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Junction Based Gallium Nitride Power Devices
… consumer electronics, data centers, electric vehicles, and power grids, etc. The key components of power electronic circuits are power semiconductor devices including diodes and transistors, which determine the performance of power electronics circuits. Traditional power devices are based …