Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 22 for “"trapped charge"”.
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Color Centers and Trapped Charge in Alkali-Halide Crystals
Made available in DSpace on 2015-05-12T17:11:40Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 0003996.PDF: 2833956 bytes, checksum: a33af390498c8a1e60a2f9b3a65c7ef0 (MD5) Previous issue date: 1952
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The Trapped Charge Interfacial Modulation of the Electron Beam Induced Current in Metal Oxide Semiconductor Capacitors
… reduction in the lateral current response--the trapped charge interfacial modulation (TCIM) of the EBIC. A new technique for extracting the Fu and Sah (23) device model parameters from a single spot-mode transient was developed. Using this technique, the excess-current component was separated …
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Radiation-induced mobility degradation in DMOS transistors.
Effects of radiation-induced interface-trapped charge and oxide-trapped charge on the inversion-layer carrier mobility in double-diffused metal-oxide-semiconductor (DMOS) power transistors are investigated. Interface-trapped charge is more effective in scattering inversion-layer carriers than …
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Evaporative printing of organic materials and metals and development of organic memories
… In the second part of the thesis we examine charge trapping and storage in organic thin film devices. We demonstrate that by controlled doping, we can engineer charge storage in active organic electronic devices. Charge trapping in organic hetero-junction structures results in two distinct …
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Oxide charge traps and interface states at the silicon-silicon dioxide interface
… the effects of oxidation parameters on oxide charge trapping. Electrons and holes were injected into the oxides by the VUV-bias method. In this method, electron-hole pairs are created at the gate-Si0interface by 2 irradiation with vacuum ultraviolet light of 10.2 eV photon energy. Electrons or …
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Charge trapping instabilities in amorphous silicon/silicon nitride thin film transistors
Charge trapping phenomena within amorphous silicon-silicon nitride TFTs have been characterised in an extensive study. A new experimental technique has been developed and applied in conjunction with the standard measurement of threshold voltage.<br/><br/>The new technique reveals two electron …
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FUNDAMENTAL ISSUE IN SPACE ELECTRONICS RELIABILITY: NEGATIVE BIAS TEMPERATURE INSTABILITY
… of Vth shifts because they failed to account for trapped charge relaxation. Specifically, we have developed a means for measuring the maximum effect of NBTI by virtue of a method that can continuously monitor the Vth(t) without having to remove the stressing voltage. The interpretation methodology …
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Electrical characterization of EEPROM test structures
… the barrier width is locally widened due to charge trapping in the oxide. This model is based on the interpretation of the non-linear FN curves, which leads to a failure mechanism that may be dependent on the tunneling current density. As the EEPROM test structure is stressed, the trapped …
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Development of inversion-mode and junctionless Indium-Gallium-Arsenide MOSFETs
… bandgap and beyond. A multi-frequency inversion-charge pumping approach was proposed to (1) study the traps located at energy levels aligned with the In0.53Ga0.47As conduction band and (2) separate the trapped charge and mobile charge contributions. The analysis revealed an effective mobility …
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Graphene Field-Effect Transistors on p-doped Semiconductors for Photodetection
… of photo-generated carrier at the interface. The trapped charge carriers induce opposite carriers in the graphene channel through the capacitive coupling effect. Due to a long lifetime of trapped carriers, the induced carriers in the graphene channel circulate multiple times under a given bias …
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Charge-Storage mechanisms in polymer electrets
In view of the importance of charge storage in polymer electrets for electromechanical transducer applications, the aim of this work is to contribute to the understanding of the charge-retention mechanisms. Furthermore, we will try to explain how the long-term storage of charge carriers in …
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An investigation of border traps and interface states in high-k/InGaAs metal-oxide-semiconductor systems
… this thesis, investigation into border traps (or charge trapping) and interface states, both of which can induce device instability, in HfO2/InGaAs and Al2O3/InGaAs metal-oxidesemiconductor (MOS) structures was carried out with an emphasis on the characterization of border traps using …
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Electrical characterization of fluorinated and oxynitrided gate-oxides
… the mechanisms of generation of oxide trapped charges during hot carrier injection stress are discussed. In this light, the quality of fluorinated and oxynitrided gate-oxides are discussed, in comparison with control oxides. The dissertation also discusses methods used to characterize …
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Probing charge motion in next-generation semiconductors with scanned probe microscopy
… researchers to explore spatial variations in charge generation and transport in solar-cell films prepared on a conductive substrate with a best-case resolution of 2 nanometers. In this thesis, we introduce new scanned probe measurements to measure light- and voltage-induced changes to …
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Investigation of Surface States and Device Surface Charging in Nitride Materials Using Scanning Kelvin Probe Microscopy
… upward band bending corresponds to 1.7X1012 cm-2 trapped charge density in the surface states. Under continuous ultraviolet (UV) illumination up to 0.6 eV surface photo voltage effect could be observed in some samples, which further indicates that surface band bending is very likely larger than …
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Transient optical and electrical effects in polymeric semiconductors
… organic devices. Usually, functions such as charge injection and transport are handled by the same material which thus needs to be highly optimized. The present work contributes to expanding the knowledge on the physical mechanisms determining device performance by analyzing the role of …
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Mechanisms for triggering high-voltage breakdown in vacuum
… with a particular focus placed upon the trapped electron energy-levels that may be present at these defect centres. Finally, consideration is given to the practical application of alumina in the trigger-ceramic of a sealed triggered vacuum gap (TVG) switch. For this purpose, a physical …
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Optical quantum random number generation: applications of single-photon event timing
… to a single incident photon. Some of this charge can become trapped in defects or impurities; if this trapped charge is released when the SPAD is active, a secondary ‘false’ detection event, or ‘afterpulse’ can occur. To lower the afterpulse probability to reasonable levels (< 1%), we …
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Photon-mediated entanglement of electron spins in a dynamic solid-state environment
… between matter qubits and photonic links. Single trapped charge carriers in quantum dots can be addressed optically, generating spin-photon entanglement between the matter qubits and \lq flying' photon qubits, a key first step in creation of a network. Such an optically linked network of spins in …
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Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability
… BD in pMOSFET increases with temperature since trapped charges during the NBTI process increase, thus resulting in percolation, a main cause of oxide degradation. The above effects can cause significant degradations in transistors, thus leading to the shifts of RF performance. This dissertation …
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