Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 7 of 7 for “"trap-assisted tunneling"”.
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Characterisation of radiation effects in ultra-thin GaAs solar cells for space applications
… study identifies the significant contribution of trap-assisted tunneling to the carrier recombination rate in these devices. This effect accounts for the difference in radiation-induced open-circuit voltage degradation rate between devices with absorber layer doping concentrations of 1 × 10¹⁷ and …
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Investigation of Degradation Effects Due to Gate Stress in GaN-on-Si High Electron Mobility Transistors Through Analysis of Low Frequency Noise
… summing Lorentzian noise spectra from multiple traps leads to 1/f and random telegraph signal (RTS) noise. The primary cause of carrier fluctuations are electron traps near the 2DEG and in the AlGaN bulk. These traps occur naturally due to dislocations and impurities in the manufacturing …
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Reliability Studies of TiN/Hf-Silicate Based Gate Stacks
… Their reliability, which is limited by trapping at pre-existing and stress induced defects, remains to be a major concern. Energy levels of electrically active ionic defects within the thick high-[Kappa] have been experimentally observed in the context of MOS band diagram for the first …
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Atomic layer deposition Al2O3-passivated AlGaN/GaN high-electron-mobility transistors on Si(111) towards reliable high-speed electronics
… structures due to the governing trap-assisted tunneling carrier transport mechanism. A 3.5 µm Schottky-gate AlGaN/GaN HEMT with VT and gm of -0.87 V and 131.67 mS/mm, respectively, at VDS = 3.5 V has been demonstrated. The measured high Schottky gate leakage current and OFF-state …
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Characterization of high-k layers as the gate dielectric for MOSFETs
… 5. Chapter 3 characterizes a s-grown electron traps in HfO2/SiO2s tacks. The issues addressed include the impact of measurement technique on electron trapping, contribution of different current components to trapping, trap location, and the capture cross section and trapping kinetics. It is …
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Photonic studies of defects and amorphization in ion beam damaged GaAs surfaces
… mode indicates the distributed nature of the traps within the band gap. A conjectural flat-band energy diagram was introduced to elucidate the proposed model. The observed dark and photoconductivity response model was based on the distributed lumped electrical components analysis. Fundamental …
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Investigation of Infrared Detectors Based on the Gallium-free Superlattice
… program provided by IRNova, which showed that trap-assisted tunneling may be the cause of this result. The next study compared varied levels of doping in the absorber region of a Ga-free SL MWIR PIN detector. The designs for these devices were similar to the initial device, but the InAsSb …