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Showing 1 to 20 of 21 for “"transistor laser"”.
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Process Development for High Speed Transistor Laser Operation
The transistor laser (TL) o ers advantages over conventional diode laser structure. The TL uses high base doping and minority carrier collection to reduce the recombination lifetime in the active region of the device to <30 ps. A fast recombination lifetime <30 ps reduces the photon-carrier …
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Characteristics, Theory and Modeling of the Transistor Laser
The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of its optical properties. These potentially lead to advantageous and useful …
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Modeling and optimization of the transistor laser operation
… describes theoretically the operation of the Transistor Lasers (TLs) from two perspectives. First, the charge control model is introduced to provide the electron characteristics in the base of the TLs. The model shows that the quantum wells (QWs) serve as electron traps to reduce the …
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High-speed characterizations of single quantum-well transistor laser
The transistor laser (TL) is a unique three-terminal semiconductor laser device that possesses qualities and functionalities that cannot be achieved by diode lasers alone. In this thesis, the history of development and device structure, as well as the carrier dynamics in the TL will be first …
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Development of vertical cavity transistor laser and microcavity laser
An energy-efficient semiconductor laser is of great interest for the massive data transmission demands in butt computing servers and supercomputing technologies. Currently, commercial vertical-cavity surface-emitting diode lasers (VCSELs) have achieved a data transmission rate of 25 Gbit/s per …
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Development of an optical nor gate transistor laser integrated circuit
The transistor laser combines the intrinsic switching property of a bipolar transistor and the coherent light output of a laser in a single device, making it uniquely suited for electro-optical integration. Furthermore, with the addition of waveguide structures, a transistor laser integrated …
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Microwave characterization of vertical cavity surface emitting diode laser and transistor laser
Semiconductor lasers are widely deployed in optical transceivers for optical fiber based short-reach (< 100m) data links. With increasingly growing data traffic worldwide in data centers, developments of faster optical transceivers, hence high-speed semiconductor lasers, are highly demanded. The …
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Analysis of transistor laser intra-cavity photon-assisted tunneling for direct voltage modulation
… optical interconnect made with semiconductor lasers is expected to play an important role in the upcoming age of big data. The technology of diode laser has been limited by its current modulation scheme in which the carrier recombination lifetime in the active region governs the ultimate speed …
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Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser
High speed semiconductor lasers are used in optical transceivers for short-reach data links. With fast-growing data capacity and traffic in the data centers around the globe, faster optical transceivers are demanded. A microcavity vertical cavity surface-emitting laser (VCSEL) is able to show a …
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Signal modulation and relative intensity noise properties of transistor laser and nano-cavity VCSEL
The transistor laser (TL) is a novel three-port optoelectronic device that exhibits intrinsic advantages such as fast base spontaneous recombination lifetime, high differential optical gain, and low carrier injection density. Due to these characteristics, we have demonstrated that the TL is able to …
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Development of high-speed vertical-cavity surface-emitting diode laser and vertical-cavity transistor laser for shortreach optical interconnects
… of vertical-cavity surface-emitting lasers (VCSELs) in the mid-1990s replaced light-emitting diodes and provided more reliable and cost-effective optical interconnects (OIs) with improved data rate from 100 Mb/s to 1 Gb/s. The transition from proton isolated VCSEL to oxide confined …
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Direct tunneling modulation and signal mixing of semiconductor lasers
The transistor laser invented by Feng and Holonyak is a unique device that bridges the gap between high-speed III-V compound semiconductor transistors and high-speed semiconductor lasers. In a highly integrated fashion, the transistor laser is capable of simultaneous transistor electrical operation …
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Design and development of distributed feedback transistor lasers
The transistor laser is a unique three-port device that operates simultaneously as a transistor and a laser. With quantum wells incorporated in the base regions of heterojunction bipolar transistors, the transistor laser possesses advantageous characteristics of fast base spontaneous carrier …
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The transistor-injected quantum cascade laser
Since its invention in 1994 the quantum cascade laser has become the most important coherent emission source for mid-infrared and terahertz ranges. The quantum cascade laser is a unipolar semiconductor laser that utilizes electron transitions between quantized states in the conduction band for …
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Physical modeling of base carrier lifetime and frequency response of heterojunction bipolar transistor
… of the quantum-well heterojunction bipolar transistor, known as the transistor laser. By revising the conventional bipolar junction transistor charge control model, this work accounts for the degraded base transfer ratio, which contrasts with the constant base transport factor close to unity …
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Three -Port Modulation of Indium Gallium Phosphide/gallium Arsenide Transistor Lasers
… material structure modification leads to the laser operation (quasi-continuous, ∼200 K) of an InGaP/GaAs/InGaAs HBLET with AlGaAs confining layers and an InGaAs recombination QW incorporated in the p-type base region. Furthermore, the microwave operation and modulation (3 GHz) of an …
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Molecular Beam Epitaxy of Gallium Arsenide Antimonide-Based Ultra-High-Speed Double Heterojunction Bipolar Transistors and Light Emitting Transistors
… work, GaAsSb-based double heterojunction bipolar transistors (DHBTs) and light emitting transistors (LETs) are grown using gas source molecular beam epitaxy (GSMBE). High-speed GaAs0.5Sb0.5/InP DHBTs are developed through the exercise of GSMBE growth optimization, device fabrication, and …
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Methodology and applications of topology optimization in nanophotonics
… for coupling the light from an edge-emitting transistor laser to a passive waveguide. This study demonstrates that for complex device architectures with multiple materials and constraints, inverse design can alleviate the load on the designer. We designed an ultra-compact spot-size converter …
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Epitaxial design, fabrication development, and characterization of transistor-injected quantum cascade laser structures
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2027-05-01
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Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers
… to ~ 1 ns in light-emitting diodes and diode lasers for the past forty years. In the present work the recombination lifetime demonstrated is able to be “tailored” (reduced) by the provided material system, cavity size, and layout design. In a light-emitting transistor or tilted-charge …
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