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Showing 1 to 3 of 3 for “"thermal emission rates"”.
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Studies of Thermal Emission Rates and Optical Cross-Sections of Carriers at Gold Centers in Silicon Using the Impurity Photovoltaic Effect
Made available in DSpace on 2015-05-12T21:41:53Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7000999.PDF: 8031245 bytes, checksum: fd46fca9713c000f5839d6f2d6e6f25d (MD5) Previous issue date: 1969
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Studies of thermal emission rates and optical cross sections of carriers at gold centers in silicons using the impurity photovoltaic effect
… the photocurrent it is possible to determine the thermal emission (or generation) rates and photoionization cross sections of carriers from the impurity centers! This information may be obtained without knowledge of the impurity concentration. The impurity photovoltaic effect is applied to study …
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Thermally Generated Traps in Boron Implanted Phosphorus Doped Silicon (Semiconductor, Defect)
… Measurements were made of the carrier thermal emission rates, emission cross sections, and activation energies for two thermally generated hole traps and six thermally generated electron traps. These traps do not appear to be present in the silicon immediately after implantation; they …