Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 155 for “"thermal annealing"”.
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Thermal annealing effects on boron-implanted HgCdTe diodes
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1988.
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Recombination luminescence in irradiated silicon: Effects of thermal annealing and lithium impurity
Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-05T21:59:28Z No. of bitstreams: 1 1971_johnson.pdf: 6554176 bytes, checksum: 1ea97249e78866141ef86dbffbcb1226 (MD5)
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The effects of rapid thermal annealing on gallium arsenide grown by MOCVD on silicon substrates
Thesis: M.S., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 1988
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Effect of thermal annealing and carbon implantation on the functional properties of nanocomposite TiSiN coatings on steel
… (typically~0.5), lower hardness, lower thermal stability (~5000 C) and lower corrosion resistance. To address some of these problems, TiSiN nanocomposite coatings are developed, which have super-hardness, better thermal stability (~10000C) and better corrosion resistance. But the …
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Study the structural properties of Ge nanoparticles formed by ion implantation and thermal annealing in nitride-base dielectric matrices
… Si3N4 and SiOxNy by ion implantation and thermal annealing. The structural properties of the NPs were determined using a combination of laboratory and synchrotron based techniques including cross-section transmission electron microscopy (TEM), x-ray diffraction (XRD), Rutherford …
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Study the structural properties of Ge nanoparticles formed by ion implantation and thermal annealing in nitride-base dielectric matrices
… Si3N4 and SiOxNy by ion implantation and thermal annealing. The structural properties of the NPs were determined using a combination of laboratory and synchrotron based techniques including cross-section transmission electron microscopy (TEM), x-ray diffraction (XRD), Rutherford …
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Wavelength Modification by Thermal Annealing and Stripe Geometry Definition by Impurity-Induced Disordering in Quantum-Well Laser Diodes (Diffusion, Gallium-Arsenide, Iii-v Semiconductors)
The effects of thermal annealing ((TURN)900(DEGREES)C) on quantum-well laser diode properties are investigated. The shift to higher energies caused by inter-diffusion of Al and Ga at the quantum-well interfaces in modeled by a modified Poschl-Teller potential. The interdiffusion coefficient …
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MEMBRANE DEVELOPMENT FOR ORGANIC SOLVENT NANOFILTRATION APPLICATION
… membranes with enhanced chemical, mechanical and thermal stability, improved permeance and selectivity, and great long-term performance for various applications. High-flux mixed matrix membranes (MMMs) for OSN were designed in flat sheet and hollow fiber configurations using two different …
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Optimizing the structure and plasticization resistance of asymmetric polyimide hollow fiber membranes for CO2 removal from natural gas
… were prone to the plasticization. In this study, thermal annealing as a post-treatment to enhance membrane’s plasticization resistance was evaluated. CO2 sorption tests provided solid evidence to prove the suppression of plasticization achieved by thermal annealing was partially because the …
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Investigation of Phase Morphology and Blend Stability in Ionomeric Perfluorocyclobutane (PFCB)/Poly(vinylidene difluoride) (PVDF) Copolymer Blend Membranes
… which may occur during fuel cell operation. Thermal annealing of the membranes has been conducted to determine the materials' morphological response to various temperatures in the absence of hydration. The results of these thermal annealing studies have facilitated the isolation of …
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Wavelength Modified and Strained-Layer Quantum-Well Heterostructure and Superlattice Lasers (aluminum-Gallium - Arsenide)
… Size quantization, high pressure, and thermal annealing are the methods used to alter the output energy of these lasers. Stimulated emission in strained-layer QWH's and SL's is demonstrated, and the form of their failure is examined.
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patial Control of the Conductivity of Poly(3,4-ethylenedioxythiopehe): Poly(styrenesulfonate) Thin Films
… thin films have undergone treatment from rapid thermal processing and direct ultraviolet irradiation at a wavelength of 254 nm. Through various characterization methods, the underlying physical changes as a result of rapid thermal annealing indicate a shift of morphology that correlates to an …
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Surface properties of poly(bisphenol-A-carbonate)
… polymer surface change in dimensions on thermal annealing, and this change observed by interferometry forms the basis of the surface free energy measurement technique. Stringent temperature control and accurate temperature monitoring during thermal annealing is an essential feature of …
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Advanced Methods for Defect Engineering in Silicon
… on boron diffusion and activation during thermal annealing for ultrashallow junction formation. The work has a strong focus on the use of mathematical modeling to better understand the mechanism of boron diffusion, and utilizes rigorous system-based methods including parameter sensitivity …
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Fabrication of solution-processed photoactive polymer- and halide perovskite-based solar cells
… iodide (MAI), allowed reaction time (Art), and thermal annealing. In this work it has been established that the best morphology of the perovskite film was achieved when the 1.0 wt% MAI solution was loaded at 60 sec on top of the pre-coated PbI2 followed by thermal annealing for two hours.
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Photonic Properties of Organic Molecular Assemblies
… density upon crystallization as demonstrated by thermally stimulated discharge experiments. The material gave rise to an impressively large second-order susceptibility despite being a colorless material. Optical performance was shown to improve 25% through AC/thermal annealing processing …
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Modeling and Control of Transient Enhanced Diffusion of Boron in Silicon
Reducing the junction depth using rapid thermal annealing with high heating rates comes at a cost of increasing sheet resistance. A model-based optimization is formulated to design the optimal annealing temperature program that gives the minimum junction depth while maintaining satisfactory sheet …
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Fabrication of Gallium Indium Arsenide Phosphide Quantum Wire Heterostructures for Optoelectronic Applications
Thermal annealing techniques were also applied to QWRs. After this treatment, emissions were found to be at a higher energy than the as-grown samples, attributed to the disordering of the lateral composition modulation which, in effect, raised the bandgap energy of the QWR material. In addition, …
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Solid state diffusion in Pd₂Si
… by which the growth of Pd₂Si proceeds under thermal annealing. Using a deposited Ti marker, the dominant moving species during Pd₂Si formation in the temperature range 250-400°C has been determined to be silicon. Palladium transport appears to occur during the initial stages of formation of …
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Growth of Semiconductor Thin Films by Pulsed Laser Deposition
… used in the experiment. In SnO2 thin films, thermal annealing has been used to convert into crystalline structure with (110), (101) and (211) orientations. After fabricating the amorphous SnO2 thin films, they were put into an oven with specific temperatures to anneal them. The minimum …
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