Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 12 of 12 for “"technology computer-aided design (TCAD)."”.
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TCAD-Informed Surrogate Models of Semiconductor Devices
… that approximate the behavior of fine-grained technology computer-aided design (TCAD) device models using a coarsified grid. The resulting surrogate models are shown to approximate the current-voltage characteristics of the fine-grained models to within a maximum error of 0.1% while using less …
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Radiation Damage in CMOS Image Sensors for Space Applications
… Coupled Device (CCD) style CMOS image sensor designed for TDI (Time Delay and Integration) mode imaging, a mode commonly used for Earth observation. Damage from high energy protons in the space environment decreases the Charge Transfer Efficiency (CTE) and increases the dark current of such …
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Performance limits of silicon solar cells due to structural defects
… thesis presents a methodology to quantify the technology innovations necessary to reach climate-driven deployment targets for photovoltaics and shows an analysis based on current commercial technology incorporating monocrystalline silicon absorbers. Then, a model for the electrical activity of …
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Optical design guidelines for spectral splitting photovoltaic systems : a sensitivity analysis approach
… band gap. This thesis uses two-dimensional technology computer aided design (TCAD) simulations to develop design guidelines for optical components used for this purpose. Two optical parameters, spectral fidelity -- the fraction of photons that are absorbed by the intended material -- and …
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Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization
… information for further device scaling. Technology computer aided design (TCAD) and sophisticated on-wafer DC and RF measurements are essential in this research. Drift-diffusion (DD) theory is used to investigate a novel negative differential resistance (NDR) effect and a collector …
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A study of carbon and iron charged point defects in gallium nitride: electronic structure implications for high-power photoconductive solid state switch applications
… rich capa- bilities of device-scale engineering design tools (e.g., Technology Computer- Aided Design (TCAD)) it is necessary to know a variety of material de- pendent parameters for which experimental results have not been obtained. Therefore, the ability to determine those parameters via ab …
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High Efficiency IGBTs through Novel Three-Dimensional Modelling and New Architectures
New Insulated Gate Bipolar Transistor (IGBT) designs are reliant on simulation tools, such as Sentaurus technology computer-aided design (TCAD) models, which allow for rapid device development that could not be achieved by manufacturing prototypes due to the cost and time associated with …
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Metodi avanzati di Laser Annealing, dai materiali complessi al trasporto su nanoscala
… del materiale) negli strumenti commerciali di Technology Computer Aided Design (TCAD) è attualmente l'ostacolo principale all'ampia applicazione di LA nella micro e nanoelettronica. Il LA, in ogni caso, induce una cinetica di non equilibrio nei materiali irradiati e le difficoltà nel …
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Trade-offs between performance and reliability of sub 100-nm RF-CMOS technologies
… It is demonstrated through experimental data and TCAD simulations that floating-body devices have improved RF performance but degraded reliability compared to body-contacted devices. 2) Floating-body effects in a cascode core is studied. Cascode cores are demonstrated to achieve much larger …
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Multi-Kilovolt Gallium Nitride Power Transistors
… gas (2DEG) channel in GaN HEMT. This design enables a uniform distribution of E-field, enabling the voltage upscaling in GaN HEMT up to 10,000 V (i.e., 10 kV), which is the milestone voltage class in unipolar power devices for high-power applications. The first part of this thesis …
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Design And Characterization Of Noveldevices For New Generation Of Electrostaticdischarge (esd) Protection Structures
The technology evolution and complexity of new circuit applications involve emerging reliability problems and even more sensitivity of integrated circuits (ICs) to electrostatic discharge (ESD)-induced damage. Regardless of the aggressive evolution in downscaling and subsequent improvement in …
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High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
The objective of this research is the design and development of ultra-low-leakage mixed-conduction gallium nitride (GaN) diodes with reverse blocking voltage approaching parallel-plane behavior. Although GaN is a promising wide bandgap (WBG) material, experimentally reported GaN power devices …