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Showing 1 to 12 of 12 for “"tantalum nitride"”.
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Microstructures and oxidation properties in hafnium-tantalum-nitride ceramics
… relationship in the hafnium nitride system, two sets of hafnium nitride diffusion couples were processed by hot-isostatic pressing and their resulting microstructure and phase orientation were identified. Distinct regions were found in the diffusion couples. It was shown that …
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Phase Composition, Microstructure, and Physical Properties of Poly- and Single-Crystal Tantalum Nitride Layers
Polycrystalline delta-TaN layers deposited on SiO2 at 350°C with Ei = 20 eV in mixed Ar+15%N2 discharges initially exhibit competitive texture evolution until a single texture dominates at t ≳ 200 nm. The preferred orientation of 500-nm-thick Ei = 20 eV layers can be selectively and …
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Chemically Enhanced Physical Vapor Deposition (Cepvd) of Tantalum Nitride-Based Films for Diffusion Barrier Layers Used in ULSI Devices
A zero-order semi-empirical model is established allowing the attachment of physical understanding and CEPVD experimental phenomena. The model stems from the knowledge of reactive sputtering and PECVD processes as well as the acquired CEPVD experiment results. It correlates the processing …
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Diffusion Barriers/Adhesion Promoters. Surface and Interfacial Studies of Copper and Copper-Aluminum Alloys
… of copper sputter-deposited onto sputter-cleaned tantalum nitride is investigated. The data show that copper growth on tantalum nitride proceeds with the formation of 3-D islands, indicating poor adhesion characteristics between copper and Ta0.4N. Post-annealing experiments indicate that copper …
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Electrical characterization of plasma-enhanced Cvd silicon nitride dielectric on copper
… as the bottom electrode, plasma enhanced silicon nitride as the dielectric, and Tantalum nitride as the top electrode. The target capacitance density is 1.5fF/mum2. The target leakage current is 1e-7A/cm2 at 3.3V at 125°C. The maximum operating voltages that the MIM is designed for is 5V. The …
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Instrumentation For the Study of Tantalum Diffusion Barriers Between Silicon Substrates and Copper Films
… between silicon and copper is needed. Currently tantalum and tantalum nitride are two materials that have been successfully used as diffusion barriers, but a detailed study of the physical properties that affect their diffusion blocking abilities is lacking. It is currently believed that grain …
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Wear and Corrosion Resistance Improvement of CoCrMo alloy by Tantalum Based Coatings
… to an increase in the lifetime of the implants. Tantalum (Ta) has attracted much interest as a coating material for the femoral head due to its unique properties. Ta is biocompatible, highly corrosion-resistant, and mechanically strong and hard which make it suitable for wear resistance …
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Vibrational and anion photoelectron spectroscopy of transition metal clusters
… for the anionic platinum trimer (Pt3-) and the tantalum nitride anion (TaN−). The data is obtained through anion photoelectron spectroscopy via velocity map imaging (VMI), which permits the simultaneous measurement of photoelectron spectra and photoelectron angular distributions (PADs). The …
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A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
… and beyond to replace conventional SiO2 or oxynitrides since it possesses a dielectric constant of 22 – 25, a large band gap of 5.6 eV with sufficient band offsets of larger than 1.5 eV, and is thermally stable in contact with silicon and metal gates. However, HfO2 is vulnerable to the …
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Resistive Switching Behavior in Low-K Dielectric Compatible with CMOS Back End Process
… cells. Current state-of-the-art thin Cobalt (Co)/Tantalum Nitride (TaN) bilayer liner with physical vapor deposited (PVD) Cu-seed layer has been implemented for BEOL Cu/low-k interconnects. TaN is used for the barrier and Co is used to form the liner as well as promoting continuity for the Cu …
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Deposition and characterization of magnetron sputtered BCC tantalum
… results for developing and characterizing tantalum (Ta) coatings on steel substrates deposited by DC magnetron sputtering. Deposition of tantalum on steel is of special interest for the protection it offers to surfaces, e.g. the surfaces of gun barrels against the erosive wear of hot …
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Analyse dünner Schichten mit der optischen Glimmentladungsspektroskopie
Die vorliegende Arbeit hat zum Ziel, ausgehend vom aktuellen Stand der Technik, die Möglichkeiten der optische Glimmentladungsspektroskopie (GD-OES) für Tiefenprofilanalysen dünner und dünnster Schichten (Schichtdicken = 1 bis 100 nm) zu bestimmen und geeignete instrumentelle und methodischen …