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Showing 1 to 1 of 1 for “"surface conductivity mobility"”.
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Investigations of electron scattering mechanisms at the silicon-silicon dioxide interface
… silicon-silicon dioxide interface. Theoretical surface conductivity mobility in a semiconductor space-charge region for the temperature range 1000K to 4000K was calculated using a classical Boltzmann-Fuchs equation with constant field and constant relaxation time approximations. The surface …