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Showing 1 to 2 of 2 for “"surface accumulation layer"”.
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Electronic transport and structure of a surface quantum well
… work, a structural study of antimonide buffer layers on GaAs substrates was performed. Using in situ diffraction and ex situ microscopy, we examine the lattice transition between GaAs substrates, and the highly mismatched material GaSb. When GaSb grows on GaAs, it follows a complex …
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Electronic Transport in Highly Mismatched InAs Films on GaAs
… properties of Si- and Mg-doped InAs epitaxial layers grown by MOCVD were studied by performing magneto-transport measurements at different temperatures, from 300 K down to 1.2 K. The longitudinal magnetoresistance and Hall effect indicate a three-band system existing in n-type (p-type) InAs, …