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Showing 1 to 1 of 1 for “"surface, silicon, growth, theoretical, molecular, calculations"”.
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Theoretical study of the molecular processes occurring during the growth of Silicon on Si(100) and SixGe1-x/Si(100)
… attempt to elucidate the mechanisms of several surface processes. The focus of this work was on the processes occurring on the surface of pure, strained silicon(100)-2??1 as well as silicon-germanium during the growth of silicon by gas-source molecular beam epitaxy (GSMBE). First-principles …