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Showing 1 to 20 of 182 for “"superlattice"”.
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Acousto-Electric Impedance Of Ferroelectric Phononic Superlattice
… Impedance z of a Ferroelectric Phononic Superlattice (fps) is investigated. The analytical derivation of z and its phase reveal that both are functions of physical parameters such as the electromechanical coupling coefficient, the mechanical quality factor, the domain length and the phase …
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Antimony-based type-II superlattice infrared detectors
… predicted high performance for InAs/GaSb type-II superlattice structures, which rely on mature growth of III-V semiconductors and offer many levels of freedom in design due to band structure engineering. This work focuses on the fabrication and characterization of type-II superlattice infrared …
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Superlattice Formation in Group-Ivb Transition Metal Dichalcogenides
Made available in DSpace on 2015-05-13T15:22:15Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7913664.PDF: 3192782 bytes, checksum: 606f8a210c191f583f5315a3e1efe707 (MD5) Previous issue date: 1978
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Superlattice-source nanowire FET with steep Subthreshold characteristics
… towards the analysis and demonstration of a superlattice-source nanowire FET which can potentially beat the 60 mV/dec limit. This key to this device concept is to engineer the density of states of electrons at the source via a superlattice. We have calculated the band structure of a …
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Synthesis and Electronic Transport of Natural Superlattice Compounds
… thesis, we present a synthesis study of natural superlattices composed of transition metal dichalcogenide (TMD) monolayers alternating with spacer layers. These superlattices belong to the TMD family with chemical formula MS₂, M = (V, Nb, Mo, W). We study one such compound, Sr-VS₂, through …
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Fabrication and measurement of lateral-surface-superlattice devices
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Mid-IR type-II InAs/GaSb nanoscale superlattice sensors
… infrared system. In recent years, InAs/GaSb superlattice based detectors have appeared as an interesting alternative to the present-day IR detector systems. These heterostructures have a type-II band alignment such that the conduction band of InAs layer is lower than the valence band of GaSb …
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Structural and thermal properties of graphene - boron nitride superlattice
… such as the graphene - boron nitride (C-BN) superlattices. C-BN superlattices with regular ordered subdomains of graphene and boron nitride have recently been synthesized and characterized as a potential candidate for optoelectronic and thermoelectric devices. However, detailed structure of …
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Theory and experiments of type-II superlattice infrared photodetectors
The InAs/GaSb type-II superlattices have drawn extensive research interest in the past few decades. The type-II band alignment in this material system provides a long cutoff wavelength and a wide optical tunable range in the mid-infrared regime. Photodetectors based on type-II superlattices are …
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Superlattice formation in group IV-B transition metal dichalcogenides
Electron diffraction studies show that a 2ao x 2co super1attice forms in TiSe2 at low temperature. Strong diffuse scattering is observed above T. An optically active far-infrared lattice mode is observed which c breaks up into several additional modes below the phase transition. In the infrared …
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Strain superlattice effects on the electronic properties of graphene
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2026-12-01
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Nanoparticle Superlattice Processing: Monodispersed Building-Blocks & Single Crystal Films
… groups, NCTs can be tailored to produce superlattices with controlled crystalline structures, lattice spacing, and geometries. These superlattices have potential applications in photonics, plasmonics, and microfluidicfluidics. While NCTs can be produced in bulk scale, processing these …
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Investigation of Infrared Detectors Based on the Gallium-free Superlattice
… from a 14ML InAs - 12ML InAs_{0.65}Sb_{0.35} superlattice. The results of this showed an unexpectedly high level of dark current. The cause of this current was investigated using a curve-fitting program provided by IRNova, which showed that trap-assisted tunneling may be the cause of this …
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Defect investigations in InAs/GaSb type-II strained layer superlattice
InAs/GaSb type-II strained layer superlattices are a material used for infrared detection. By adjusting the thickness of the InAs and GaSb layers, the material bandgap can be tuned to absorb photons from 3-30 um. Compared to competing materials such as HgCdTe and InSb, InAs/GaSb superlattices are …
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The potential for superlattice precipitate reinforcement in titanium-iron alloys
… potential synergistic benefits of a matrix with superlattice precipitates. The titanium-iron system is selected for this purpose, particularly as both are abundant elements, which should address cost and sustainability concerns. Titanium is an ideal base element owing to its high specific …
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Unipolar barrier strained layer superlattice infrared photodiodes : physics and barrier engineering
Type-II InAs/GaSb Strained Layer Superlattice (T2SL) is an emerging technology for infrared detection. They are being seen as a threat to 50 years old incumbent technology based on Mercury-Cadmium-Telluride (MCT) system. T2SL have been theoretically predicted to outperform MCTs. This dissertation …
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InAs/Ga(In)Sb superlattice based infrared detectors using nBn design
… at higher temperatures. InAs/GaSb strained layer superlattice (SLS) photodectors are now considered as a promising technology for both MWIR and LWIR wavelength ranges. The bandgap of the SLS can be adjusted by controlling the thickness of the constituent InAs and GaSb layers during the growth …
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Characterization of, and novel architectures for, strained-layer superlattice infrared photodetectors
… class of materials, the III-V type-II superlattices (T2SLs), have been actively studied due to several potential and predicted advantages over MCT. T2SLs offer an easier path to the design of arbitrarily small effective bandgaps by controlling the layer thickness, more uniform material …
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Theory and Experiment of Antimony-Based Type-Ii Superlattice Infrared Photodetectors
… considerable interest in InAs/InGaSb type-II superlattices because of their broken-gap type-II band alignment, which forms spatially indirect band gaps in the range of 3--30 mum. Combining the advantages of III-V epitaxial growth techniques and high sensitivity to normal incident light, the …
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