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Showing 1 to 1 of 1 for “"substrate impurity"”.
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Substrate Impurity Incorporation Mitigation for Improved AlGaN/GaN-ON-Si RF Performance
A conductive interface is formed between Silicon substrate and AlN nucleation layer during high-temperature deposition. This parasitic conduction path is highly detrimental as it is capacitively coupled to the GaN HEMT 2DEG channel. Moreover, the presence of significant lattice mismatch and thermal …