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Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors

Zhu, YanVirginia Tech2014

… based on group III-V compound semiconductor and Ge heterostructures further improve the ON-state current and reduce SS due to the low bandgap energies and smaller carrier tunneling mass. The mixed arsenide/antimonide (As/Sb) InxGa1-xAs/GaAsySb1-y and Ge/InxGa1-xAs heterostructures allow a …

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