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Showing 1 to 10 of 10 for “"stray inductance"”.

  1. High Bandwidth Rogowski Coils, Commutation Loop Stray Inductance, and the Si IGBT and the SiC MOSFET Based Hybrid Concept

    … It then focuses on the current commutation loop inductance, underscoring the importance of minimising this parameter to optimise the design and efficiency of converters and modules, especially when employing WBG power devices in high-speed applications. The thesis introduces various strategies to …

    cambridge Repository record for High Bandwidth Rogowski Coils, Commutation Loop Stray Inductance, and the Si IGBT and the SiC MOSFET Based Hybrid Concept (opens in a new tab)

  2. Innovative GTO Thyristor Based Switches Through Unity Gain Turn-Off

    … capability even with a relatively high gate loop stray inductance. Therefore conventional GTOs with flexible gate lead can be used to achieve the state-of-the-art performance similar to that of the Integrated Gate Commutated Turn-Off thyristor (IGCT). Detailed current commutation analysis and …

    vt Repository record for Innovative GTO Thyristor Based Switches Through Unity Gain Turn-Off (opens in a new tab)

  3. Medium voltage extreme fast charger based on novel medium voltage SiC power devices

    … module with double-sided cooling and ultra-low stray inductance has been developed which can be used to realize a 500kW extreme fast charger. Device characterization tests on the module demonstrate satisfactory static and dynamic performance.

    texas Repository record for Medium voltage extreme fast charger based on novel medium voltage SiC power devices (opens in a new tab)

  4. Unlocking SiC MOSFET Switching Performance Through Packaging and Instrumentation

    … connections. Wire-bonding introduces significant stray inductances into the transistor connections. When combined with high-speed switching, such inductance can cause device damaging voltage overshoots, unwanted resonances and parasitic turn-on of the transistor. Due to such effects, the switching …

    cambridge Repository record for Unlocking SiC MOSFET Switching Performance Through Packaging and Instrumentation (opens in a new tab)

  5. Design and Validation of A High-Power, High Density All Silicon Carbide Three-Level Inverter

    … busbar structure can effectively reduce stray inductance in the current-commutation loop, reducing switching overshoots of power modules and increasing semiconductor reliability. The system-level design and trade-off is also analyzed and illustrated by using a 250kW three-level T-type …

    arkansas Repository record for Design and Validation of A High-Power, High Density All Silicon Carbide Three-Level Inverter (opens in a new tab)

  6. High power wide bandgap cascode switching circuits

    … and shown to be effective. The effects of stray inductance on cascode switching are quantified experimentally for the first time. This corroborates other work and informs the layout of cascode circuits. The resilience of cascodes to severe $\frac{dV}{dt}$ is also demonstrated. The findings …

    cambridge Repository record for High power wide bandgap cascode switching circuits (opens in a new tab)

  7. A Double-Sided Stack Low-Inductance Wire-Bondless SiC Power Module with a Ceramic Interposer

    … (SiC) power devices to achieve a low parasitic inductance and an improved thermal performance. A half-bridge module consisting of 900-V SiC MOSFETs is realized to minimize stray parasitic inductance as well as to provide both vertical and horizontal cooling paths to maximize heat dissipation. …

    arkansas Repository record for A Double-Sided Stack Low-Inductance Wire-Bondless SiC Power Module with a Ceramic Interposer (opens in a new tab)

  8. Novel Power Semiconductor Devices and Technologies

    … remain soft whilst switching at lOOOA/ps with a stray inductance of 150pH both at a case temperature of 300K and 400K. Bench marking of these components to commercially available 1200V and 1700V devices shows improved reverse recovery characteristic for the 1200V component whereas the 1700V …

    de-montfort Repository record for Novel Power Semiconductor Devices and Technologies (opens in a new tab)

  9. Experimental and analytical study of electrical crosstalk in CMB cold readout systems and implications for power spectra

    … with the bandwidth of the filters; mutual inductance crosstalk, arising from possible electromagnetic coupling between spiral inductors; and common impedance crosstalk, caused by the presence of a non-zero inductance in series with all the multiplexing branches. The LC filters chip design, …

    trento Repository record for Experimental and analytical study of electrical crosstalk in CMB cold readout systems and implications for power spectra (opens in a new tab)

  10. Electrical Integration of SiC Power Devices for High-Power-Density Applications

    … is performed to investigate the influences of stray inductances on the MOSFETs switching waveforms. A small-signal model is then developed to explain the parasitic ringing in the frequency domain. From this angle, the ringing mechanism can be understood more easily and deeply. With the use of …

    vt Repository record for Electrical Integration of SiC Power Devices for High-Power-Density Applications (opens in a new tab)