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Showing 1 to 3 of 3 for “"strain induced lateral ordering"”.
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Optical Studies of Iii-V Quantum Wires Grown by Strain-Induced Lateral Ordering (Silo) Process
A characterization technique is developed to estimate the extent and shape of the spontaneously created composition modulation. The technique, based on resonant Raman spectroscopy, is general and can be utilized to map out composition regions in any semiconductor microstructure. Computer …
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Optical studies of III-V quantum wires grown by strain induced lateral ordering (SILO) process
… to carefully study the quantum wires grown via strain induced lateral ordering (SILO) which is a bulk thermodynamics driven self-ordering process. Fourier transform photoluminescence (FTPL) measurements have been employed to study the polarization anisotropy in the emission from these …
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Electronic and Optical Properties of Self-Assembled Quantum Wires
… band structures and optical matrix elements of strained multiple quantumwires (QWR's) are investigated theoretically via the effective bond-orbital model(EBOM), which takes into account the effects of valence-band anisotropy and the band mixing. It is found that the strain leads to further …