Global ETD Search
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Showing 1 to 3 of 3 for “"stack-die package"”.
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Characterization and Failure Mode Analysis of Cascode GaN HEMT
… and the common source inductance (CSI) of the package; while the turn-off loss is extremely small attributing to the cascode structure. With this unique feature, the critical conduction mode (CRM) soft switching technique are applied to reduce the dominant turn on loss and increase converter …
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High Frequency GaN Characterization and Design Considerations
… control, and thermal management. This work studies the insight switching characteristics of high-voltage GaN devices including some specific issues related to the cascode GaN. The package impact on the switching performance and device reliability will be illustrated in details. A stack-die …
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Characterization and Application of Wide-Band-Gap Devices for High Frequency Power Conversion
… switching performance of cascode GaN HEMT is studied at first. An accurate behavior-level simulation model is developed with comprehensive consideration of the impacts of parasitics. Then based on the simulation model, detailed loss breakdown and loss mechanism analysis are studied. The cascode …