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Showing 1 to 1 of 1 for “"sputtered-gate-SiO2"”.
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Development of high-performance GaN-based power transistors
… Ohmic contact annealing. Second, to reduce the gate leakage current and enhance the breakdown voltage, gate-SiO2 deposited by radiofrequency magnetron sputtering is investigated. The routinely occurring degradation of the two-dimensional electron gas properties due to the sputtering-induced …