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Showing 1 to 1 of 1 for “"sputtered-gate-SiO2"”.

  1. Development of high-performance GaN-based power transistors

    … Ohmic contact annealing. Second, to reduce the gate leakage current and enhance the breakdown voltage, gate-SiO2 deposited by radiofrequency magnetron sputtering is investigated. The routinely occurring degradation of the two-dimensional electron gas properties due to the sputtering-induced …

    uiuc Repository record for Development of high-performance GaN-based power transistors (opens in a new tab)