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Showing 1 to 20 of 35 for “"spin-transfer"”.

  1. BOOLEAN AND BRAIN-INSPIRED COMPUTING USING SPIN-TRANSFER TORQUE DEVICES

    Several completely new approaches (such as spintronic, carbon nanotube, graphene, TFETs, etc.) to information processing and data storage technologies are emerging to address the time frame beyond current Complementary Metal-Oxide-Semiconductor (CMOS) roadmap. The high speed magnetization switching …

    purdue-thes Repository record for BOOLEAN AND BRAIN-INSPIRED COMPUTING USING SPIN-TRANSFER TORQUE DEVICES (opens in a new tab)

  2. Nuclear spin transfer studies of chemical reactions in living systems

    Thesis (Ph. D.)--Massachusetts Institute of Technology, Harvard-MIT Division of Health Sciences and Technology Program in Medical Engineering and Medical Physics, 1987.

    mit Repository record for Nuclear spin transfer studies of chemical reactions in living systems (opens in a new tab)

  3. Mechanism and assessment of spin transfer torque (STT) based memory

    … current density passes through the MTJ, the spin-polarized current will exert a spin transfer torque to switch the magnetization of the free layer. This is the fundamental of the novel write mechanism in STT-RAM, current-induced magnetization switching. It allows STT-RAM to have a smaller …

    mit Repository record for Mechanism and assessment of spin transfer torque (STT) based memory (opens in a new tab)

  4. Exploring Spin-transfer-torque devices and memristors for logic and memory applications

    … <p>Due to their non-volatility and high density, Spin Transfer Torque (STT) devices are among the most prominent candidates for logic and memory applications. In this research, we first considered a new logic style called All Spin Logic (ASL). Despite its advantages, ASL consumes a large amount of …

    purdue-thes Repository record for Exploring Spin-transfer-torque devices and memristors for logic and memory applications (opens in a new tab)

  5. Nanoscale Nonvolatile Memory Circuit Design using Emerging Spin Transfer Torque Magnetic Random Access Memory

    The spin transfer torque magnetic random access memory (STT-MRAM) is suitable for embedded and second level cache memories in the mobile CPUs. STT-MRAM is a highly potential nonvolatile memory (NVM) technology. There has been a growing demand to improve the efficiency and reliability of the NVM …

    umkc Repository record for Nanoscale Nonvolatile Memory Circuit Design using Emerging Spin Transfer Torque Magnetic Random Access Memory (opens in a new tab)

  6. Critical Current Enhancement In Magnetic Spin-Transfer Nano-Devices Through Doping With The Rare Earth Terbium

    … terbium doping in order to suppress the various spin-transfer effects, to the potential benefit of magnetic hard drive read head technology. This enhancement is much stronger at lower temperatures, and we can understand the 1/T temperature dependence observed through the application of …

    cornell Repository record for Critical Current Enhancement In Magnetic Spin-Transfer Nano-Devices Through Doping With The Rare Earth Terbium (opens in a new tab)

  7. Spin-Transfer-Torque (STT) Devices for On-chip Memory and Their Applications to Low-standby Power Systems

    … various promising nonvolatile memory elements, spin-transfer torque magnetic RAM (STT-MRAM) is identified as one of the most attractive alternatives to conventional SRAM. However, several design challenges of STT-MRAM such as shared read and write current paths, single-ended sensing, and high …

    purdue-thes Repository record for Spin-Transfer-Torque (STT) Devices for On-chip Memory and Their Applications to Low-standby Power Systems (opens in a new tab)

  8. Design of robust spin-transfer torque magnetic random access memories for ultralow power high performance on-chip cache applications

    <p>Spin-transfer torque magnetic random access memories (STT-MRAMs) based on magnetic tunnel junction (MTJ) has become the leading candidate for future universal memory technology due to its potential for low power, non-volatile, high speed and extremely good endurance. However, conflicting read …

    purdue-thes Repository record for Design of robust spin-transfer torque magnetic random access memories for ultralow power high performance on-chip cache applications (opens in a new tab)

  9. Ultrafast laser driven spin generation in metallic ferromagnets

    … dissertation presents experimental studies of spin generation in metallic ferromagnets (FM) driven by ultrafast laser light using a pump-probe technique. The pump light gives a driving force for spin generation by depositing energy or spin angular momentum on FM. The probe light measures spin

    uiuc Repository record for Ultrafast laser driven spin generation in metallic ferromagnets (opens in a new tab)

  10. Current-induced torques in ferromagnets at room temperature

    … Ta, are studied. The resonance is driven by both spin-transfer torque and Oersted field, and the DC voltage is attributed to both spin rectification and spin pumping. The CITs can be well analysed from the lineshape of the voltage and its dependence on YIG thickness, from which we deduce that the …

    cambridge Repository record for Current-induced torques in ferromagnets at room temperature (opens in a new tab)

  11. A 4kb memory array for MRAM development

    … MTJs. Specifically, novel mechanisms involving spin-transfer or thermal assistance can be studied and compared to current MRAM designs that switch the MTJ with current-induced magnetic fields. Using this array design, both high speed digital and quasi-static dI/dV experiments can be conducted to …

    mit Repository record for A 4kb memory array for MRAM development (opens in a new tab)

  12. THE STUDY OF PERPENDICULARLY MAGNETIZED COFE/PD MULTILAYERS FOR DOMAIN WALL MOTION

    … magnetization, narrow DW width and high spin polarization can induce low threshold current density for DW motion in CoFe/Pd superlattice-like multilayer films. Next, we show that DW motion can be driven by a low Jth with small bias field in the CoFe/Pd multilayers-based nanowires. The …

    nus Repository record for THE STUDY OF PERPENDICULARLY MAGNETIZED COFE/PD MULTILAYERS FOR DOMAIN WALL MOTION (opens in a new tab)

  13. Magnetic domain wall devices : from physics to system level application

    Spintronics promises intriguing device paradigms where electron spin is used as the information token instead of its charge counterpart. Spin transfer torque-magnetic random access memory (STT-MRAM) is considered one of the most mature nonvolatile memory technologies for next generation computers. …

    mit Repository record for Magnetic domain wall devices : from physics to system level application (opens in a new tab)

  14. Exploring the interplay between topological order, magnetism and superconductivity

    … the phases exhibited by an interacting quantum spin Hall edge state in the presence of finite chemical potential (applied gate voltage) and spin imbalance (applied magnetic field). We find that the helical nature of the edge state gives rise to orders that are expected to be absent in non-chiral …

    uiuc Repository record for Exploring the interplay between topological order, magnetism and superconductivity (opens in a new tab)

  15. Study of Spin Configuration of Hexagonal Shaped Ferromagnetic Structures

    … unique characterisation system and the study of spin configurations in hexagonal ferromagnetic structures. The characterisation system developed is able to perform in-situ magnetic imaging, structural modification and electrical transport measurement on ferromagnetic structures. For the latter, …

    nus Repository record for Study of Spin Configuration of Hexagonal Shaped Ferromagnetic Structures (opens in a new tab)

  16. Non-Volatile Memory Adaptation in Asynchronous Microcontroller for Low Leakage Power and Fast Turn-on Time

    … asynchronous non-volatile RAM is designed with a Spin-Transfer Torque (STT) memory device model and CMOS transistors in a 65 nm technology. A self-timed Quasi-Delay-Insensitive 1 KB STT RAM is designed with an MTNCL interface and handshaking protocol. A replica methodology is implemented to handle …

    arkansas Repository record for Non-Volatile Memory Adaptation in Asynchronous Microcontroller for Low Leakage Power and Fast Turn-on Time (opens in a new tab)

  17. Point contact studies of rare earth-transition metal compounds

    … contact techniques have been used to study the spin-dependent properties of rare earth-transition metal compounds and transition metal thin films and bi-layers. The transport spin polarisation of Cu, Co and Fe has been measured using point contact Andreev reflection (PCAR), and found to be in …

    soton Repository record for Point contact studies of rare earth-transition metal compounds (opens in a new tab)

  18. Coherent Dynamic Nuclear Polarization: Mechanistic Insights and Experimental Advances

    … solid-state Nuclear Magnetic Resonance (NMR) by transferring polarization from electrons to nuclei. While traditional continuous-wave (CW) DNP has advanced through improved radical design, the development of pulsed DNP—employing short, high-power microwave bursts—has shown the advantages of …

    mit Repository record for Coherent Dynamic Nuclear Polarization: Mechanistic Insights and Experimental Advances (opens in a new tab)

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