Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 31 for “"spin-orbit torque"”.
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Spin-orbit torque switching of compensated ferrimagnetic cobalt-terbium alloys
Spintronic devices promise to be an energy efficient alternative to complementary metal oxide semiconductor devices for logic and memory. However, in order to be more competitive, further reductions in switching energy and switching speed are needed. Recently, there has been interest in using …
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Room temperature spin-orbit torque switching induced by a topological insulator
… have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. The strongly spin-moment coupled electronic states have been extensively pursued to realize efficient spin-orbit torque switching. However, so far current-induced magnetic …
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Investigation of spin-caloric and spin-orbit torque materials by vectorial spin Seebeck measurements and an advanced x-ray magnetic reflectivity analysis
… in magnetic Heusler compounds in the field of spintronics based on their wide range of magnetic properties and susceptibility to manipulation by elemental substitution. In particular half-Heusler alloys are currently attracting growing attention due to their non-centrosymmetric C1b magnetic …
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Current-induced Dynamics of Easy-Plane Antiferromagnets
… the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge. In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane …
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Magnetic domain wall devices : from physics to system level application
Spintronics promises intriguing device paradigms where electron spin is used as the information token instead of its charge counterpart. Spin transfer torque-magnetic random access memory (STT-MRAM) is considered one of the most mature nonvolatile memory technologies for next generation computers. …
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CURRENT-INDUCED MAGNETIC FIELD-FREE SWITCHING OF PERPENDICULAR MAGNETIZATION
The spin-orbit torque offers a powerful tool for controlling the magnetic order through electrical current in magnetic materials. Conventional method for field-free switching is complicated. In this thesis, we demonstrate the existence of out-of-plane spin torque in HM/FM bilayer and also a single …
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Optical studies of current-induced spin-orbit effects in magnetic systems
… of magnetic moments is essential for future spintronics applications, in which the intrinsic spin of the electron is utilized in addition to the electron charge for data processing and storage. Spin-orbit-interaction-induced phenomena, including the spin Hall effect, Rashba-Edelstein effect …
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Interface-driven spin-orbit torques in magnetic heterostructures
The connection between charge and spin transport in solid state materials offers new techniques for generating and detecting spin currents and could potentially allow high-performance memory and logic devices. Simple multilayer thin films or "heterostructures" such as Pt/Co have broken inversion …
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Harnessing Magnetic Switching and Dynamics Using Electron and Magnon Spin Currents
Spintronics exploits the intrinsic spin of the electron in addition to its fundamental charge for designing next-generation electronic devices, with the purpose of reducing power consumption and enabling novel computing functions. The manipulation, transmission, and detection of spin information …
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EPITAXIAL SPIN-ORBIT AND MAGNETIC MATERIALS FOR INTEGRATION ONTO A SEMICONDUCTOR PLATFORM
… Meanwhile, magnetic devices, based on the spin of the electron, have historically served as the backbone fordigital memory storage. In recent times, however, charge-based memories, such as flash and dynamic random access memory (DRAM), have become more commonplace. Over the last few …
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Magnetic tunnel junction devices and circuits for in-memory, neuromorphic and radiation hard computing
… technology is approaching its physical limits, spintronics, with benefits like non-volatility and normally-off behavior, is a promising candidate for next-generation artificial intelligence computing applications. In this dissertation, I show prototypes of magnetic tunnel junction in-memory …
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Unidirectional Magnetoresistive Behaviors: Materials, Characterization, and Prospects
Spin-orbit torque (SOT) materials and devices have become one of the most promising candidates for future memory and computing systems due to their high endurance, high speed, high storage density, and low energy consumption. However, using the three-terminal magnetic tunnel junction structure for …
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Spin-Transfer-Torque (STT) Devices for On-chip Memory and Their Applications to Low-standby Power Systems
… various promising nonvolatile memory elements, spin-transfer torque magnetic RAM (STT-MRAM) is identified as one of the most attractive alternatives to conventional SRAM. However, several design challenges of STT-MRAM such as shared read and write current paths, single-ended sensing, and high …
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Tunable spin-charge conversion in vanadium dioxide
Spin-based electronic devices rely on the interplay of spin and charge degree of freedom of electrons and are emerging as a promising beyond CMOS technology. Fast, scalable, low energy consumption magnetic memories and nonvolatile spin logic devices have been demonstrated utilizing …
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THE STUDY OF PERPENDICULARLY MAGNETIZED COFE/PD MULTILAYERS FOR DOMAIN WALL MOTION
… magnetization, narrow DW width and high spin polarization can induce low threshold current density for DW motion in CoFe/Pd superlattice-like multilayer films. Next, we show that DW motion can be driven by a low Jth with small bias field in the CoFe/Pd multilayers-based nanowires. The …
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Magnetic ordering and spin wave dynamics in transition metal arsenides
Ever since spin orbit torque based switching was proposed in antiferromagnets, there is a growing interest in using a metallic antiferromagnet as an active component of a spintronic device. Arsenic forms a large pool of magnetic metals in combination with transition metal atoms. In this report, we …
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Practical Pathways to Efficient MRAM: Spin-Orbit Torques, Low-Damping, and Anomalous Hall Conductivity in Polycrystalline Materials
… single-layer with modest anti-damping spin-orbit torque (SOT), $θ_{DL} ≈ 0.05. Here, we investigate an alternative approach to the traditional heavy metal/ferromagnet bilayer to produce SOTs, which suffers from high-damping that is detrimental to energy-efficiency. Instead, of breaking …
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Atomistic Study of Traveling Skyrmions in Multi-Sublattice Magnetic Materials
… as well as analytical approaches, of the spin-orbit torque motion of skyrmions in a wide host of magnetic materials, ranging from crystalline antiferromagnetic to ferrimagnetic, to ferromagnetic. We systematically analyze the relationship between physical distortions of the skyrmion …
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