Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 28 for “"spin transfer torque"”.
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BOOLEAN AND BRAIN-INSPIRED COMPUTING USING SPIN-TRANSFER TORQUE DEVICES
Several completely new approaches (such as spintronic, carbon nanotube, graphene, TFETs, etc.) to information processing and data storage technologies are emerging to address the time frame beyond current Complementary Metal-Oxide-Semiconductor (CMOS) roadmap. The high speed magnetization switching …
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Mechanism and assessment of spin transfer torque (STT) based memory
… current density passes through the MTJ, the spin-polarized current will exert a spin transfer torque to switch the magnetization of the free layer. This is the fundamental of the novel write mechanism in STT-RAM, current-induced magnetization switching. It allows STT-RAM to have a smaller …
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Exploring Spin-transfer-torque devices and memristors for logic and memory applications
… <p>Due to their non-volatility and high density, Spin Transfer Torque (STT) devices are among the most prominent candidates for logic and memory applications. In this research, we first considered a new logic style called All Spin Logic (ASL). Despite its advantages, ASL consumes a large amount of …
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Nanoscale Nonvolatile Memory Circuit Design using Emerging Spin Transfer Torque Magnetic Random Access Memory
The spin transfer torque magnetic random access memory (STT-MRAM) is suitable for embedded and second level cache memories in the mobile CPUs. STT-MRAM is a highly potential nonvolatile memory (NVM) technology. There has been a growing demand to improve the efficiency and reliability of the NVM …
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Spin-Transfer-Torque (STT) Devices for On-chip Memory and Their Applications to Low-standby Power Systems
… various promising nonvolatile memory elements, spin-transfer torque magnetic RAM (STT-MRAM) is identified as one of the most attractive alternatives to conventional SRAM. However, several design challenges of STT-MRAM such as shared read and write current paths, single-ended sensing, and high …
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Design of robust spin-transfer torque magnetic random access memories for ultralow power high performance on-chip cache applications
<p>Spin-transfer torque magnetic random access memories (STT-MRAMs) based on magnetic tunnel junction (MTJ) has become the leading candidate for future universal memory technology due to its potential for low power, non-volatile, high speed and extremely good endurance. However, conflicting read …
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Ultrafast laser driven spin generation in metallic ferromagnets
… dissertation presents experimental studies of spin generation in metallic ferromagnets (FM) driven by ultrafast laser light using a pump-probe technique. The pump light gives a driving force for spin generation by depositing energy or spin angular momentum on FM. The probe light measures spin …
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Current-induced torques in ferromagnets at room temperature
… resonance to explore the current-induced torques (CITs) in two different systems, namely YIG/heavy metal bilayers and bulk NiMnSb, at room temperature. We apply a microwave current to the sample while sweeping the external magnetic field, and measure the longitudinal DC voltage. From a …
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THE STUDY OF PERPENDICULARLY MAGNETIZED COFE/PD MULTILAYERS FOR DOMAIN WALL MOTION
… magnetization, narrow DW width and high spin polarization can induce low threshold current density for DW motion in CoFe/Pd superlattice-like multilayer films. Next, we show that DW motion can be driven by a low Jth with small bias field in the CoFe/Pd multilayers-based nanowires. The …
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Magnetic domain wall devices : from physics to system level application
Spintronics promises intriguing device paradigms where electron spin is used as the information token instead of its charge counterpart. Spin transfer torque-magnetic random access memory (STT-MRAM) is considered one of the most mature nonvolatile memory technologies for next generation computers. …
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Exploring the interplay between topological order, magnetism and superconductivity
… the phases exhibited by an interacting quantum spin Hall edge state in the presence of finite chemical potential (applied gate voltage) and spin imbalance (applied magnetic field). We find that the helical nature of the edge state gives rise to orders that are expected to be absent in non-chiral …
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Study of Spin Configuration of Hexagonal Shaped Ferromagnetic Structures
… unique characterisation system and the study of spin configurations in hexagonal ferromagnetic structures. The characterisation system developed is able to perform in-situ magnetic imaging, structural modification and electrical transport measurement on ferromagnetic structures. For the latter, …
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Non-Volatile Memory Adaptation in Asynchronous Microcontroller for Low Leakage Power and Fast Turn-on Time
… asynchronous non-volatile RAM is designed with a Spin-Transfer Torque (STT) memory device model and CMOS transistors in a 65 nm technology. A self-timed Quasi-Delay-Insensitive 1 KB STT RAM is designed with an MTNCL interface and handshaking protocol. A replica methodology is implemented to handle …
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Point contact studies of rare earth-transition metal compounds
… contact techniques have been used to study the spin-dependent properties of rare earth-transition metal compounds and transition metal thin films and bi-layers. The transport spin polarisation of Cu, Co and Fe has been measured using point contact Andreev reflection (PCAR), and found to be in …
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Towards building a prototype spin-logic device
… storage. In particular, the discovery of Spin-Transfer Torque (STT) has allowed information to be written to individual magnets using spin-currents. This has replaced the more traditional Oersted-field control used in field-MRAMs and allowed further scaling of magnetic-memories. A less …
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Microstructural Analysis of Garnet-Heavy Metal Heterostructures
… make REIGs desirable magnetic materials for spintronics [3]. Spintronics devices aim to provide CMOS compatible microelectronics that utilize electric charge and magnetic moments to store and process information. REIGs exhibit a variety of magnetic interactions, both bulk and interfacial, …
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In-Memory Computing Architecture for Deep Learning Acceleration
… eDRAM buffers are replaced by dense cross-point Spin Transfer Torque Magnetic RAM. I explored the design space and demonstrated that MARVEL can provide further improved power efficiency with increased number of integration layers. In the last piece of work, I propose the first holistic solution …
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Hybrid spintronics and straintronics: An ultra-low-energy computing paradigm
… switching of bits. Unlike charge-based devices, spin-based devices are switched by flipping spins without moving charge in space. Although some energy is still dissipated in flipping spins, it can be considerably less than the energy associated with current flow in charge-based devices. …
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Spin-torque induced high frequency excitations and switching in spin-valve nanocontacts
This thesis presents a novel spintronic design of a nano-sized high frequency oscillator, which is a cutting edge physics research field with a huge potential for future applications in the areas of mobile telecommunication and information- as well as in biomedical-technologies. In this device, a …
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