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Showing 1 to 20 of 48 for “"spectroscopic ellipsometry"”.
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Mueller matrix spectroscopic ellipsometry of multiferroics
… the experimental data. Initially, Mueller matrix spectroscopic ellipsometry is reviewed. Analysis for optical spectra measured for isotropic Dy_3Fe_5O_{12} is given, for which contributions from magnetic and electric excitations are identified and the absence of strong magneto-electric effects is …
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Characterization of Ferroelectric Films by Spectroscopic Ellipsometry
… multi-layer modeling technique. Variable angle spectroscopic ellipsometry (VASE) models were developed by sequentially testing Bruggeman effective-media approximation (EMA) layers designed to simulate microstructural effects such as surface roughness, porosity, secondary phases, and substrate …
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Optical study of InP related semiconductor alloys;spectroscopic ellipsometry
In this thesis, spectroscopic ellipsometry is used to study the effects of disorder, self-ordering, strain, and dopants on electronic band structure of InxGal-xP grown on GaAs, InxGa1_xP grown on GaP substrate with composition-graded InGaP buffer layer and lattice matched (AlxGa1_x)o.sino.sP grown …
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Developing spectroscopic ellipsometry to study II-VI and diluted magnetic semiconductors
We have constructed a rotating analyzer spectroscopic ellipsometer (RAE) to study effects of magnetic and nonmagnetic doping on the £1 and £1 + .11 band gap energies in ZnSe-based II-VI semiconductors. To remove the natural surface oxide overlayer which distorts the intrinsic dielectric response of …
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Spectroscopic ellipsometry and dielectric modeling of thin film CdTe/CdS photovoltaic devices
Spectroscopic ellipsometry (SE) is a non-contact, non-destructive characterization technique for probing the optical properties of thin films. With the advent of second-generation solar cells, SE has seen use as a method for determining the dielectric function of each layer in heterostructured, …
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In situ spectroscopic ellipsometry studies of silicon film crystallinity and interface structure deposited by DC reactive magnetron sputtering
This work reports a systematic series of in situ spectroscopic ellipsometry (SE) studies on silicon film growth by reactive magnetron sputtering of a Si target in (Ar + H$\sb2$) at low temperatures ($\le$600$\sp\circ$C). The complete crystalline film growth zones have been identified for the first …
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Spectroscopic Ellipsometry Studies of Thin Film a-Si:H Solar Cell Fabrication by Multichamber Deposition in the n-i-p Substrate Configuration
Real time spectroscopic ellipsometry (RTSE), and ex-situ mapping spectroscopic ellipsometry (SE) are powerful characterization techniques capable of performance optimization and scale-up evaluation of thin film solar cells used in various photovoltaics technologies. These non-invasive optical …
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A real-time study of hydrogenated amorphous silicon, microcrystalline silicon, and amorphous silicon carbide growth by optically enhanced infrared reflectance spectroscopy
… film microstructure is obtained from real time spectroscopic ellipsometry measurements.
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Chemical vapor deposition of organosilicon and sacrificial polymer thin films
… highlighting the versatility of CVD processes. Spectroscopic tools including Fourier transform infrared spectroscopy, variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy, Raman spectroscopy, and nuclear magnetic resonance (NMR) spectroscopy were utilized to characterize …
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Reactive Sputter Deposition of Lithium Phosphorus Oxynitride Thin Films, A Li Battery Solid State Electrolyte
… optical emission spectroscopy (ICP/OES), and spectroscopic ellipsometry. In addition, film density, and the intrinsic stress of the deposited films were also studied. The highest ionic conductivity of 9.8 x 10-6 S/cm was obtained at elevated deposition temperature and is correlated to a …
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Microreflectance and ellipsometric studies on the polished surfaces of some minerals
… are assessed using microscope photometry and ellipsometry. Results from both methods are compared and any discrepancies in the data are Interpreted within the experimental and instrumental constraints of the two techniques. The errors involved in the calculation of reflectance and the optical …
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Deposition and Characterization of Silicon Nitride/gallium Arsenide Metal Insulator Semiconductor Structures With Heteroepitaxial Interlayers
… photoelectron spectroscopy as well as ex situ spectroscopic ellipsometry and high resolution transmission electron microscopy measurements. The culmination of this work is the attainment of an interface trap density near the mid- 10$\sp{10}$ eV$\sp{-1}$ cm$\sp{-2}$ level, which is the lowest …
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Tunable micro-cavities in photonic band-gap yarns and optical fibers
… dispersion relation afforded by broadband spectroscopic ellipsometry. The fundamentals of this technique, which is used to characterize a number of dielectrics, semi-conductors and metals, are surveyed. Two fiber structures are then explored: fibers for external reflection and hollow-core …
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Structure and properties interrelationships of SrBi₂(Ta<sub>1-x</sub>Nb<sub>x</sub>)₂O₉
… study by a non-destructive optical method, spectroscopic ellipsometry, was proposed to determine nucleation and grain growth temperatures. The information on structure development can be obtained by observing how the refractive indices and film thicknesses change as functions of annealing …
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Growth and Characterization of (InGa)2O3 Alloys
… 1.9-2.0 and 0.0005-0.5 respectively using spectroscopic ellipsometry. The bandgap of the alloys is shown to be 3.68-3.86 eV, with the increase due to an increased gallium composition. Mobility and resistivity of the alloys are ~1019-1020 cm2/V-1s-1 and ~10-3-10-2 Ω·cm respectively and vary …
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Opto-mechanical design of synchrotron radiation-based far-infrared spectroscopic ellipsometer with strong magnetic-field
… of a synchrotron radiation based far-infrared spectroscopic ellipsometer with a strong external magnetic-field capability. Since high magnetic field has enabled major breakthrough in science such instrument will be highly important to the field of condensed matter physics and characterization …
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Nonvolatile memory devices with colloidal, 1.0 nm silicon nanoparticles : principles of operation, fabrication, measurements, and analysis
… tunneling oxide. Material characterization via spectroscopic ellipsometry, atomic force microscopy and transmission electron microscopy showed that across wafer sub-monolayer coverage with low-levels of agglomeration was achieved with nanoparticles so positioned possibly due to solvent-mediated …
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DC magnetron reactive sputtering of low stress AlN piezoelectric thin films for MEMS application
… was conducted with x-ray diffractometry, spectroscopic ellipsometry, and surface profilometry. Optimization of film deposition parameters improved AIN film properties in the MEMS sensors. Film property characterization using response surface methodology indicated microstructural changes …
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Towards stimuli-responsive functional nanocomposites: smart tunable plasmonic nanostructures Au-VO2
… constants of VO2 thin films by spectroscopic ellipsometry has been intensively also studied in order to bring more insights about the shift of the plasmon of gold nanoparticles imbedded in VO2 host matrix.
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Kinetic Roughening During Hot-Wire Chemical Vapor Deposition of Hydrogenated Amorphous Silicon
… atomic force microscopy (AFM) and in situ spectroscopic ellipsometry (SE) are used to characterize the surface morphology and its dynamics. Results of this work indicate that the surface morphology is shaped by geometric shadowing of growth particles and thermally-activated smoothening …
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