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Showing 1 to 8 of 8 for “"specific on-resistance"”.
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A SiC JFET-Based Three-Phase AC PWM Buck Rectifier
Silicon carbide (SiC) power switching devices promise to be a major breakthrough for new generation ac three-phase power converters, offering increased junction temperature, low specific on-resistance, fast switching, and low switching loss. These characteristics are desirable for increasing power …
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High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors
… insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this study. …
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Junction Based Gallium Nitride Power Devices
Power electronics plays an important role in many energy conversion applications in modern society including consumer electronics, data centers, electric vehicles, and power grids, etc. The key components of power electronic circuits are power semiconductor devices including diodes and transistors, …
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Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes
… Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of 4.5–4.9 eV, which is higher than the bandgap of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this wide-bandgap is the high critical electric field of Ga2O3, which is estimated to be from 5 …
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Packaging of Enhancement-Mode Gallium Nitride High-Electron-Mobility Transistors for High Power Density Applications
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are favored for their smaller specific on-resistance, lower switching losses, and higher theoretical temperature limits as compared to traditional silicon (Si) power switches. They have the potential to dramatically increase the power …
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Robustness and Stability of Gallium Nitride Transistors in Dynamic Power Switching
Wide-bandgap gallium nitride (GaN) high electron mobility transistors (HEMTs) are gaining increased adoption in applications like mobile electronics and data centers. Benefitting from the high channel mobility and the high breakdown field of GaN, GaN power HEMTs enable low specific on-resistance …
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Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
… Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of 4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium Nitride (GaN). A benefit of this ultra-wide bandgap is the high-temperature stability due to the low intrinsic carrier …
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High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
… and development of ultra-low-leakage mixed-conduction gallium nitride (GaN) diodes with reverse blocking voltage approaching parallel-plane behavior. Although GaN is a promising wide bandgap (WBG) material, experimentally reported GaN power devices result in large leakage currents with lower …