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Showing 1 to 1 of 1 for “"space-modulated junction termination extension (SM-JTE)"”.
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High-performance gallium nitride power devices with efficient edge termination structures compliant with plasma-assisted molecular-beam epitaxy based silicon nitride shadowed selective-area growth technique
… as, ion-implantation and inductively-coupled plasma reactive-ion etching (ICP-RIE) etching, introduce lattice damage and defects, causing large leakage current components. Second, inefficient edge termination (ET) designs are incapable of reaching ideal parallel-plane breakdown voltage. This work …