Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 8 of 8 for “"solid-source"”.
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Novel process and apparatus design for metalorganic chemical vapor deposition (MOCVD) of superconducting thin films
… are too slow to be commercially viable; liquidsource MOCVD systems can be precisely controlled, but the solvents they require tend to kill superconducting oxides; and solid-source MOCVD systems suffer from imprecise process control, thermal degradation of precursor materials, or both. A simple …
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Optimization of the Process for Semiconductor Device Fabrication in the MicrON 636 Whittemore Cleanroom Facility
… to model the diffusion of phosphorus from a solid source within the crystal. An empirical model is proposed that accurately predicts the junction depth and sheet resistance of diffused phosphorus layers within the silicon wafer. Throughout the course of the process it is necessary to monitor …
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Indium-Gallium-Arsenide Quantum Wire Infrared Photodetectors
… semi-insulating (001) on-axis InP substrates via solid-source molecular beam epitaxy (MBE) have been fabricated and characterized. The quantum wires (QWRs) were formed using an in situ on-step strain-induced lateral-layer ordering (SILO) method. The layered (GaAs)1.80/(InAs)2.35 short-period …
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Heteroepitaxial Germanium-on-Silicon Thin-Films for Electronic and Photovoltaic Applications
… properties of epitaxial thin-film Ge, grown by solid source MBE on Si using a two-step growth process, were investigated. High-resolution x-ray diffraction analysis demonstrated ~0.10% tensile strained Ge epilayer, owing to the thermal expansion coefficient mismatch between Ge and Si, and …
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Dopant Incorporation in InAs/GaAs Quantum Dot Infrared Photodetectors
… QDIPs. </p><p>InAs/GaAs QDIPs were grown using solid source molecular beam epitaxy (MBE) with different doping conditions. The QDIPs were optically characterized using photoluminescence and Fourier transform infrared (FT-IR) spectroscopy. Devices were fabricated using standard cleanroom …
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Fabrication and Characterization of Optoelectronics Devices Based on III-V Materials for Infrared Applications by Molecular Beam Epitaxy
… lattice-matched to GaSb grown by solid source molecular beam epitaxy using As and Sb valved crackers greatly facilitated the lattice-matching of the quaternary InGaAsSb absorbing layer to the GaSb substrates, as characterized by X-ray diffraction. The resulting device exhibited low …
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Integrated Catalytic Fabrication Approaches for Graphene-Based Electronic Devices
Catalytic Chemical Vapour Deposition (CCVD) of graphene is the most promising production method of large-area, high-quality graphene. However, the required transfer step from the metal growth substrate to the desired dielectric substrate is a major bottleneck for the integrated manufacturing of …
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Desarrollo de criterios nucleares de diseño de fuentes de neutrones de espalación
Abastract Spallation neutrón sources allow obtaining high neutronic flux for many applications, scientific or industrial. Due to this, in recent years, several proposals have been made where its use is suggested, among which should be highlighted the European Spallation Source (ESS), the Japanese …