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Showing 1 to 15 of 15 for “"sintered silver"”.

  1. Thermo-Mechanical Reliability of Sintered-Silver Joint versus Lead-Free Solder for Attaching Large-Area Devices

    … sintering technique enabled by a nano-scale silver paste was developed for attaching 100 mm2 silicon die. This new lead-free packaging technique for die-attachment was compared with soldering by vacuum reflow. Lead-free solder SAC305 and SN100C were selected and used in this work since they …

    vt Repository record for Thermo-Mechanical Reliability of Sintered-Silver Joint versus Lead-Free Solder for Attaching Large-Area Devices (opens in a new tab)

  2. Design, Analysis and Experimental Verification of a Mechanically Compliant Interface for Fabricating Reliable, Double-Side Cooled, High Temperature, Sintered Silver Interconnected Power Modules

    … and half-bridge topologies, were assembled using sintered silver device attachment rather than conventional solder alloys. Thermomechanical stresses in the double-side architecture were mitigated with a compliant layer fabricated from elliptical silver tubes. This research presents an introduction …

    vt Repository record for Design, Analysis and Experimental Verification of a Mechanically Compliant Interface for Fabricating Reliable, Double-Side Cooled, High Temperature, Sintered Silver Interconnected Power Modules (opens in a new tab)

  3. Low-Temperature Sintering of Nanoscale Silver Paste for Semiconductor Device Interconnection

    … of low-temperature sintering of nanoscale silver pastes. The nanoscale silver pastes have been formulated by adding organic components (dispersant, binder and thinner) into nano-silver particles. The selected organic components have the nano-particle polymeric stabilization, paste …

    vt Repository record for Low-Temperature Sintering of Nanoscale Silver Paste for Semiconductor Device Interconnection (opens in a new tab)

  4. Reliability Evaluation of Large-Area Sintered Direct Bonded Aluminum Substrates for Medium-Voltage Power Modules

    … focus will be given to the utilization of silver sintering as a bonding method for high temperature, high density power modules. Nano-silver paste and preform will be examined in detail as enabling technologies for a new generation of power electronics. To accomplish this task, analysis and …

    vt Repository record for Reliability Evaluation of Large-Area Sintered Direct Bonded Aluminum Substrates for Medium-Voltage Power Modules (opens in a new tab)

  5. Two-dimensional Mapping of Interface Thermal Resistance by Transient Thermal Impedance Measurement

    … Zth change of devices induced by degradation in sintered silver die-attach layer during temperature cycling. At the end of the temperature cycling, failure modes of the sintered silver layer were investigated by scanning electron microscope (SEM) and X-ray scanning, to construct a thermal model …

    vt Repository record for Two-dimensional Mapping of Interface Thermal Resistance by Transient Thermal Impedance Measurement (opens in a new tab)

  6. The Development of Novel Interconnection Technologies for 3D Packaging of Wire Bondless Silicon Carbide Power Modules

    … schemes were proposed and evaluated. A novel sintered silver preform was developed to facilitate flip-chip interconnections for a bare-die power device while operating in a high ambient temperature. The preform was demonstrated to have 3.75× more bonding strength than a conventional sintered

    arkansas Repository record for The Development of Novel Interconnection Technologies for 3D Packaging of Wire Bondless Silicon Carbide Power Modules (opens in a new tab)

  7. Thermomechanical Reliability of Low-Temperature Sintered Attachments on Direct Bonded Aluminum (DBA) Substrate for High-Temperature Electronics Packaging

    … sintering technique enabled by a nanoscale silver paste was developed for attaching large-area (>100 mm2) semiconductor chips. The nanoscale silver paste can be sintered at a much lower temperature (<300 oC) than in the conventional sintering process (>800 oC), and at the same time reached …

    vt Repository record for Thermomechanical Reliability of Low-Temperature Sintered Attachments on Direct Bonded Aluminum (DBA) Substrate for High-Temperature Electronics Packaging (opens in a new tab)

  8. Processing and Properties of Die-attachment on Copper Surface by Low-temperature Sintering of Nanosilver Paste

    … plays a key role in the total packaging process. Sintered nanosilver paste may be used as a lead-free alternative to solder for die-attachment at sintering temperature below 300 °C without applying any pressure. Typically, the substrate, such as direct bond copper (DBC) substrates, has surface …

    vt Repository record for Processing and Properties of Die-attachment on Copper Surface by Low-temperature Sintering of Nanosilver Paste (opens in a new tab)

  9. Sintering of Micro-scale and Nanscale Silver Paste for Power Semiconductor Devices Attachment

    … the advance of power conversation application. Silver paste sintering has been widely used in microelectronics and been demonstrated the superior properties. The high processing temperature, however, prevents its application of interconnecting power semiconductor devices. This research focuses …

    vt Repository record for Sintering of Micro-scale and Nanscale Silver Paste for Power Semiconductor Devices Attachment (opens in a new tab)

  10. Design, Product Development and Risk Assessment of Tin (sn) ring electrodes as a substitute to Silver-Silver Chloride (AG AgCI) ring electrodes for High Definition transcranial Direct Current Stimulation (HD-tDCS)

    … ring electrodes as an inexpensive alternative to sintered Silver-Silver Chloride (Ag|AgCl) ring electrodes for High Definition – transcranial Direct Current Stimulation (HD-tDCS). Throughout our initial bench top testing of tin electrodes in combination with a ‘conductive electrode gel’, the …

    cuny Repository record for Design, Product Development and Risk Assessment of Tin (sn) ring electrodes as a substitute to Silver-Silver Chloride (AG AgCI) ring electrodes for High Definition transcranial Direct Current Stimulation (HD-tDCS) (opens in a new tab)

  11. A diffusion-viscous analysis and experimental verification of the drying behavior in nanosilver-enabled low-temperature joining technique

    The low-temperature joining technique (LTJT) by silver sintering is being implemented by major manufacturers of power electronics devices and modules for bonding power semiconductor chips. A common die-attach material used with LTJT is a silver paste consisting of silver powder (micron- or …

    vt Repository record for A diffusion-viscous analysis and experimental verification of the drying behavior in nanosilver-enabled low-temperature joining technique (opens in a new tab)

  12. Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes

    … Ga2O3 SBDs are fabricated and packaged using silver sintering as the die attach. The sintered silver joint has higher thermal conductivity and better reliability as compared to the solder joint. The metal finish on the anode and cathode has been optimized for silver sintering. Large-area, …

    vt Repository record for Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes (opens in a new tab)

  13. Electrical and Thermal Characterizations of IGBT Module with Pressure-Free Large-Area Sintered Joints

    Silver sintering technology has received considerable attention in recent years because it has the potential to be a suitable interconnection material for high-temperature power electronic packaging, such as high melting temperature, high electrical/thermal conductivity, and excellent mechanical …

    vt Repository record for Electrical and Thermal Characterizations of IGBT Module with Pressure-Free Large-Area Sintered Joints (opens in a new tab)

  14. Thermo-mechanical Analysis of a Custom PCB-DBC Hybrid Package for a (650 V, 150 A) e-GaN HEMT

    … minimize ΔWavg on those locations. The sintered silver bond expected to fail first is the Internal Gate bond, and an encapsulant with the maximum possible E and 8 ppm/°C minimizes ΔWavg. The Sn60Pb40 bond expected to fail first is the External Source 4 bond and using an encapsulant with …

    vt Repository record for Thermo-mechanical Analysis of a Custom PCB-DBC Hybrid Package for a (650 V, 150 A) e-GaN HEMT (opens in a new tab)

  15. Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes

    … large-area Ga2O3 diodes are packaged using silver sintering as the die attach. The sintered silver joint has higher thermal conductivity (kT) and better reliability as compared to the solder joint. Due to the low kT of Ga2O3 material, junction-side-cooled (JSC) packaging configuration is …

    vt Repository record for Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes (opens in a new tab)