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Showing 1 to 10 of 10 for “"silver sintering"”.

  1. Low Pressure and Short-Time Silver-Sintering for Power Modules

    Silver-sintering has become one of the main chip interconnect technologies in wide bandgap (WBG) semiconductor power modules due to its excellent thermal conductivity, high temperature stability and mechanical reliability. However, the traditional silver sintering process generally has the problems …

    vt Repository record for Low Pressure and Short-Time Silver-Sintering for Power Modules (opens in a new tab)

  2. Reliability Evaluation of Large-Area Sintered Direct Bonded Aluminum Substrates for Medium-Voltage Power Modules

    … focus will be given to the utilization of silver sintering as a bonding method for high temperature, high density power modules. Nano-silver paste and preform will be examined in detail as enabling technologies for a new generation of power electronics. To accomplish this task, analysis and …

    vt Repository record for Reliability Evaluation of Large-Area Sintered Direct Bonded Aluminum Substrates for Medium-Voltage Power Modules (opens in a new tab)

  3. Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes

    … Ga2O3 SBDs are fabricated and packaged using silver sintering as the die attach. The sintered silver joint has higher thermal conductivity and better reliability as compared to the solder joint. The metal finish on the anode and cathode has been optimized for silver sintering. Large-area, …

    vt Repository record for Design, Fabrication, and Packaging of Gallium Oxide Schottky Barrier Diodes (opens in a new tab)

  4. Low-Temperature Sintering of Nanoscale Silver Paste for Semiconductor Device Interconnection

    … relationships of low-temperature sintering of nanoscale silver pastes. The nanoscale silver pastes have been formulated by adding organic components (dispersant, binder and thinner) into nano-silver particles. The selected organic components have the nano-particle polymeric …

    vt Repository record for Low-Temperature Sintering of Nanoscale Silver Paste for Semiconductor Device Interconnection (opens in a new tab)

  5. A diffusion-viscous analysis and experimental verification of the drying behavior in nanosilver-enabled low-temperature joining technique

    The low-temperature joining technique (LTJT) by silver sintering is being implemented by major manufacturers of power electronics devices and modules for bonding power semiconductor chips. A common die-attach material used with LTJT is a silver paste consisting of silver powder (micron- or …

    vt Repository record for A diffusion-viscous analysis and experimental verification of the drying behavior in nanosilver-enabled low-temperature joining technique (opens in a new tab)

  6. Fabrication Refinements of Advanced Packaging Techniques for Medium-Voltage Wirebond-less Multi-Chip Power Modules

    … interconnects. For this module, encapsulated, silver-sintered substrates reduce the peak electric field within the package, improving the partial discharge inception voltage to meet insulation requirements. It is essential to have a uniform bondline between the substrates to achieve all bond …

    vt Repository record for Fabrication Refinements of Advanced Packaging Techniques for Medium-Voltage Wirebond-less Multi-Chip Power Modules (opens in a new tab)

  7. Field-Grading in Medium-Voltage Power Modules Using a Nonlinear Resistive Polymer Nanocomposite Coating

    … techniques, including double-sided cooling and silver-sintering. Prototypes of 10-kV and 20-kV silicon carbide diode modules confirmed the practicality and efficacy of the polymer nanocomposite. The insulation enhancements observed at the module level mirrored those at the substrate level. …

    vt Repository record for Field-Grading in Medium-Voltage Power Modules Using a Nonlinear Resistive Polymer Nanocomposite Coating (opens in a new tab)

  8. Electrical and Thermal Characterizations of IGBT Module with Pressure-Free Large-Area Sintered Joints

    Silver sintering technology has received considerable attention in recent years because it has the potential to be a suitable interconnection material for high-temperature power electronic packaging, such as high melting temperature, high electrical/thermal conductivity, and excellent mechanical …

    vt Repository record for Electrical and Thermal Characterizations of IGBT Module with Pressure-Free Large-Area Sintered Joints (opens in a new tab)

  9. Double-Side Cooled 3.3 kV, 100 A SiC MOSFET Phase-Leg Modules for Traction Applications

    This thesis presents the development of a double-side cooled 3.3 kV, 100 A SiC MOSFET phase-leg power module for heavy-duty traction applications. Parasitic extraction and thermal simulations of the module showed a parasitic inductance of 2.89 nH and junction temperature of 108.3 °C at a heat flux …

    vt Repository record for Double-Side Cooled 3.3 kV, 100 A SiC MOSFET Phase-Leg Modules for Traction Applications (opens in a new tab)

  10. Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes

    … large-area Ga2O3 diodes are packaged using silver sintering as the die attach. The sintered silver joint has higher thermal conductivity (kT) and better reliability as compared to the solder joint. Due to the low kT of Ga2O3 material, junction-side-cooled (JSC) packaging configuration is …

    vt Repository record for Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes (opens in a new tab)