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Showing 1 to 13 of 13 for “"silicon-silicon dioxide interface"”.

  1. Investigations of Electron Scattering Mechanisms at the Silicon - Silicon-Dioxide Interface

    Edwards, John RichardUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T21:41:56Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7020957.PDF: 4655744 bytes, checksum: f9dd506b5c1e261c939f094a9be8b7f2 (MD5) Previous issue date: 1970

    uiuc Repository record

  2. Investigations of electron scattering mechanisms at the silicon-silicon dioxide interface

    Edwards, John Richard2011

    … scattering mechanisms of electrons at the silicon-silicon dioxide interface. Theoretical surface conductivity mobility in a semiconductor space-charge region for the temperature range 1000K to 4000K was calculated using a classical Boltzmann-Fuchs equation with constant field and constant …

    uiuc Repository record

  3. Oxide Charge Traps and Interface States at the Silicon - Silicon-Dioxide Interface

    Stivers, Alan RandolphUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-13T15:22:19Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 8009184.PDF: 5184720 bytes, checksum: 9aa13487b79c46fe3257d939d46ae56b (MD5) Previous issue date: 1979

    uiuc Repository record

  4. Oxide charge traps and interface states at the silicon-silicon dioxide interface

    Stivers, Alan Randolph2011

    … electron-hole pairs are created at the gate-Si0interface by 2 irradiation with vacuum ultraviolet light of 10.2 eV photon energy. Electrons or holes are injected by applying the appropriate voltage to the gate. The charge trapped at the interface was measured by the capacitance-voltage method …

    uiuc Repository record

  5. The Impact of Atomic Hydrogen on the Properties of the Silicon/Silicon Dioxide Interface

    Zhang, Chun2010

    … on the surface passivation of Si and SiO2 interface was mainly investigated. The effect of corona charging, humidity, UV exposure and mineral acid on Si and SiO2 interface was compared to the effect of atomic hydrogen. The electrical properties of thin, low temperature oxides, and in …

    aus-cath Repository record

  6. The Impact of Atomic Hydrogen on the Properties of the Silicon/Silicon Dioxide Interface

    Zhang, Chun2010

    … on the surface passivation of Si and SiO2 interface was mainly investigated. The effect of corona charging, humidity, UV exposure and mineral acid on Si and SiO2 interface was compared to the effect of atomic hydrogen. The electrical properties of thin, low temperature oxides, and in …

    anu Repository record

  7. Scattering of Conduction Electrons by Surface Oxide Charge at the Silicon - Silicon-Dioxide Interface

    Tschopp, Larry LeRoyUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T22:38:48Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7212416.PDF: 3912850 bytes, checksum: c1e9103a17e8dfe47ca70796d4a4dfb7 (MD5) Previous issue date: 1971

    uiuc Repository record

  8. Scattering of Conduction Electrons by Surface Oxide Charge at the Silicon-Silicon Dioxide Interface

    Tschopp, Larry LeRoy2011

    Submitted by Jesse Garrison (jagarris@illinois.edu) on 2011-07-08T17:56:44Z No. of bitstreams: 1 1971_tschopp.pdf: 4081394 bytes, checksum: 8f7a857b43bf06c2a7b8ba1fc7c71451 (MD5)

    uiuc Repository record

  9. Properties of Silicon - Silicon-Dioxide Interface States in Thin-Oxide Mos (metal-Oxide Semiconductor) Structures

    Eaton, Dennis HammondUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T22:38:52Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7317191.PDF: 5032878 bytes, checksum: 5a2c0456921a996696db9958e93ad39c (MD5) Previous issue date: 1972

    uiuc Repository record

  10. Impact Ionization in Charge Coupled Devices

    Detry, James FrancisUniversity of Illinois at Urbana-Champaign2014

    … purpose of measuring impact ionization at the silicon-silicon dioxide interface. All past experiments have measured impact ionization either totally or partly in the bulk. Since the mobility of holes and electrons is lower at the interface than in the bulk, the impact ionization coefficient …

    uiuc Repository record

  11. A backscattering ion channeling study of the lattice site location of the constituents of two systems

    Kahn, Alan2011

    … the extent of antimony segregation to the [111] silicon - silicon dioxide interface was first determined. Channeling scans were made through the [111], [110] and [121] directions of thin silicon crystals with a silicon dioxide layer at the rear surface. By comparing the form of the channeling …

    uiuc Repository record

  12. Atomic -Scale Statistical Models of Semiconductor Device *Reliability

    McMahon, William JosephUniversity of Illinois at Urbana-Champaign2015

    … a detailed model for hot-carrier induced interface state generation in silicon metal-oxide semiconductor field-effect transistors (MOSFETs). In the process, we discuss a different interpretation of the isotope effect of silicon-hydrogen (deuterium) bond dissociation by electronic …

    uiuc Repository record

  13. One- and two-qubit operations in Si-MOS quantum dots

    Huang, Wister WeiUNSW, Sydney2019

    … simulation. Quantum bits, or qubits, made from silicon quantum dots is one scalable approach that can be used to realize a quantum computer. Even though the essential ingredients for this platform have been demonstrated, certain physical phenomena that can influence quantum bit behaviour, for …

    unsw Repository record