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Showing 1 to 2 of 2 for “"silicon-nanowire FET"”.

  1. IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING

    RESISTIVE RANDOM-ACCESS MEMORIES (RRAMS) ARE EXTENSIVELY INVESTIGATED AS A REPLACEMENT FOR FLASH MEMORIES DUE TO ITS SUPERIOR CHARACTERISTICS: HIGHER SPEED, BETTER ENDURANCE, MORE SCALABLE DESIGN AND SIMPLER FABRICATION PROCESSES. HOWEVER, DUE TO THE STOCHASTIC NATURE OF SUCH RESISTIVE SWITCHING, A …

    nus Repository record for IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING (opens in a new tab)

  2. Integrated nanoscaled detectors of biochemical species

    Rapid and reliable diagnostics of a disease represents one of the main focuses of today’s academic and industrial research in the development of new sensor prototypes and improvement of existing technologies. With respect to demographic changes and inhomogeneous distribution of the clinical …

    qucosa-diss