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Showing 1 to 17 of 17 for “"silicon oxynitride"”.
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Sputtered silicon oxynitride for microphotonics : a materials study
Silicon oxynitride (SiON) is an ideal waveguide material because the SiON materials system provides substantial flexibility in composition and refractive index. SiON can be varied in index from that of silicon dioxide (n=1.46) to that of silicon-rich silicon nitride (n-2.3). This flexibility in …
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THE USE OF PECVD SILICON OXYNITRIDE THIN-FILMS IN MICROELECTRONICS MANUFACTURING
… the conventional methods. In this project, the silicon oxynitride film is chosen as the BARC material. To obtain a wide variation of film optical property, a new method to fabricate the films is proposed. The new method that has been developed in this project utilizes SiH4, N₂, N₂O and He as …
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Fabrication of a planar optical add/drop channel filter in silicon oxynitride
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2002.
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Development of SiOxNy waveguides for integrated quantum photonics
… prerequisites for any candidate platform. Silicon oxynitride is a promising material because its refractive index can be varied over a wide range. This dissertation describes the development of silicon oxynitride waveguides for applications in the field of integrated quantum photonics. The …
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The integration of InP /InGaAsP ridge waveguide structures with dielectric waveguides on silicon
… integration of III-V optoelectronic devices on a silicon integrated circuit. Two significant capabilities required to achieve this monolithic integration were addressed: the assembly of III-V device structures on silicon and the fabrication of the waveguides that perform the intra-chip routing of …
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Efficient power coupling to waveguides in high index contrast systems
… communicate via high index contrast waveguides. Silicon nitride (SixNy) and silicon oxynitride (SixOyNz) waveguides with silicon oxide cladding can be used to guide light on a chip because they have small dimensions, low scattering loss, and can be fabricated with silicon-based technology. With …
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Adsorption of molecular layers on hydrophilic SiOxNy probed by DPI technique
… from their vapour phase onto a hydrophilic silicon oxynitride surface. Although slightly less accurate, the results are in good agreement with the previous study in terms of average orientation angle and thickness of the monolayer deposited (56.5° and 1.44 nm respectively). We also studied …
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Intrachip clock signal distribution via si-based optical interconnect
… that are monolithically integrated with compact silicon-oxynitride channel waveguides.
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Spectroscopic analysis of selected silicon ceramics
Silicon ceramics are popular in both commercial applications and material research. The purpose of this thesis is to present measurements and analysis of four different silicon ceramics: α, β and γ phases of silicon nitride and silicon oxynitride using soft x-ray spectroscopy, which analyses the …
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Optical Studies of Ordered Monomolecular Layers: Ab Initio Simulation and Experiment
… cyanobiphenyl (5CB) is applied onto the silicon oxynitride surface, and a complete wetting monolayer with the average 56 ° polar angle and 16.6 Å thickness is observed in the stabilized stage. The results match quite well with the theoretical predictions in terms of the DPI phase change …
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3-D optical waveguide arrays for in-vivo optogenetics : development and application
… patterned light to 3D targets in neural tissue. Silicon oxynitride waveguide fabrication was optimized for integration onto insertable silicon probes. The waveguides have a propagation loss of-0.4 dB/cm. Right-angle corner mirrors were fabricated at the outputs of the waveguides with losses …
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Surface Patterned Ceramics Via Breath Figures Method With Potential Application As Implant Coatings
Surface porous silicon based ceramics are a class of materials with excellent mechanical, physical and chemical properties and for this reason they are widely used in different fields of application. The resultant properties of these material are due principally to the combination of the chemical …
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An Electronic Control Architecture for a Photonic Integrated Circuit
… in a PIC, mostly based on the mature silicon technology of electronics. This thesis presents my work on electronic control architecture for PICs. The work is based on PICs fabricated in Fondazione Bruno Kessler (FBK) with silicon and dielectric technology, using silicon oxynitride …
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Molecular tailoring of interfaces for thin film on substrate systems
… photodefinable polyimide films on passivated silicon substrates, self-assembled monolayers at the interface of Au films and dielectric substrates, and mechanochemically active materials on rigid substrates. For all three materials systems, the effect of interfacial modifications on adhesion is …
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A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
… nodes and beyond to replace conventional SiO2 or oxynitrides since it possesses a dielectric constant of 22 – 25, a large band gap of 5.6 eV with sufficient band offsets of larger than 1.5 eV, and is thermally stable in contact with silicon and metal gates. However, HfO2 is vulnerable to the …
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Study the structural properties of Ge nanoparticles formed by ion implantation and thermal annealing in nitride-base dielectric matrices
… studies on the growth of Ge NPs in a silicon nitride and silicon oxynitride matrices. The main focus of this project was on the formation of Ge NPs in different Si3N4-based matrices and examining the short range atomic structure of embedded NPs as function of NP size using extended …
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Study the structural properties of Ge nanoparticles formed by ion implantation and thermal annealing in nitride-base dielectric matrices
… studies on the growth of Ge NPs in a silicon nitride and silicon oxynitride matrices. The main focus of this project was on the formation of Ge NPs in different Si3N4-based matrices and examining the short range atomic structure of embedded NPs as function of NP size using extended …