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Showing 1 to 20 of 74 for “"silicon oxide"”.
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Optical absorption of bismuth silicon oxide (Bi₁₂SiO₂₀) crystals
… characterize the optical absorption in bismuth silicon oxide (Bi₁₂SiO₂₀) crystals grown using the Bridgman technique and to identify electronic transitions responsible for absorption. Optical measurements were taken in the range of 0.4 - 11 pm at 300 K and 77 K using a spectrometer. The results …
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Silicon/silicon Oxide Interface Roughness Studied by Scanning Tunneling Microscopy
… to tunnel through 1-nm-thick industry-standard oxide to directly examine the Si/SiO2 interface and extract interface roughness parameters from the STM topography. Our results show that the interface roughness has a root mean square (rms) value of 0.285 nm and a correlation length of 2.42 nm for …
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Surface kinetics modeling of silicon oxide etching in fluorocarbon plasmas
Fluorocarbon plasma for silicon oxide etching is a complicated system involving many ion and neutral species. Depending on the plasma condition, many difficulties arise such as RIE lag, etch stop, and low selectivity to photoresist. For a better understanding of the process it is necessary to have …
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Sputtering fabrication of silicon nitride and silicon oxide based dichroic mirrors
… spectrum for future solar-cell applications. Silicon oxide and silicon nitride targets were selected as materials used in the sputtering process. The sputtered multilayers and films were then characterized and analyzed using spectrophotometry. The transmission spectrum of the initial …
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Fabrication of stress controlled silicon oxide for free- standing MEMS Devices
… from the strongly compressive stressed buried oxide layer that creates loading to the thin silicon grating membranes. In an effort to find a solution, a process of fabricating silicon-on-insulator (SOI) wafers with tensile stressed buried oxide is studied in this work. Thin silicon dioxide …
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Silicon Oxide Nanoparticles Reveal the Origin of Silicate Grains in Circumstellar Environments
… throughout the galaxy and the origin of silicon nanoparticles thought to be responsible for the observed extended red emission in diffuse galactic background are still far from being understood. One of the most abundant oxygen bearing species in molecular astronomical regions is SiO. It …
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First principles-based atomistic modeling of the structural properties of silicon-oxide nanomaterials
… properties of amorphous semiconductor and oxide materials as well as their interface. To bolster the reliability of the CRN model, we have developed force fields based on gradient corrected density functional theory (DFT) calculations. Our in-house CRN-MMC tools have been massively …
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Degradation Studies of Ultrathin Silicon Oxide Under Electrical Stress Using a Scanning Tunneling Microscope
Submitted by Jesse Garrison (jagarris@illinois.edu) on 2012-01-17T18:25:40Z No. of bitstreams: 1 1999_hetrick.pdf: 3179100 bytes, checksum: 1456c9f34957d5afe213413ca490bce8 (MD5)
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Using Covalent and Non-Covalent Chemistry to Control Properties of Single -Walled Carbon Nanotubes
… of functionalization. The adsorption of SWNT to silicon oxide surfaces modified with 3-aminopropyltriethoxysilane (APTES) is controlled via type of functional moiety, extent of functionalization, and nature of silicon oxide surface chemistry. Self-consistent field theory for polymer systems is …
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On-chip parallel detection of foodborne pathogens using loop-mediated isothermal amplification
… loop-mediated isothermal amplification on a silicon oxide chip. To our knowledge, this is the first report of miniaturized isothermal nucleic acid amplification on integrated circuit materials. Inhibition of nucleic acid amplification by adsorption of the polymerase by silicon oxide is …
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Study of Ellipsometric Applications and Examination of Optical Anisotropy in Aluminium and Silicon Oxides
… to study optical anisotropy in aluminium and silicon oxides by rotating the samples about their normal surface. The optical anisotropy in the aluminium oxide was detected in a polycrystalline (as received) and electropolished single crystal. In silicon oxide, optical anisotropy was present …
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Durability of Adhesive Joints Subjected to Environemntal Stress
… of relative humidity on a model epoxy bonded to silicon oxide. Lastly, the effects of water and temperature on the adhesion of a commercial filled epoxy bonded to silicon oxide was characterized and interpreted. A novel impedance sensor for investigating adhesion was developed in a collaborative …
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Chemistry, Detection, and Control of Metals during Silicon Processing
… manufacturing of integrated circuits (ICs) on silicon wafers. Chapter 1 begins with an overview of IC manufacturing, including discussion of the common aqueous cleaning solutions, metallization processes, and analytical techniques that will be investigated in subsequent chapters. Chapter 2 …
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Dynamic aspects of adsorbed polymer layers: Evidence of glass-like transitions
… a greater affinity for the surface (either silicon oxide or germanium oxide). The polymers were amorphous and flexible. The weakly adsorbing molecules in these experiments were protio and deuterio polystyrene (hPS & dPS), and polydimethylsiloxane (PDMS) in control experiments. The more …
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Aqueous-Derived Thin Films and their Interfacial Interactions with Semiconductor Surfaces: A Spectroscopic Study
Metal oxide systems are well known for their high dielectric constants, which are important for advanced microelectronics applications. The microelectronics industry currently employs vacuum-based techniques, such as chemical vapor deposition (CVD), to deposit metal oxide films. These vapor-phase …
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Optoelectronic properties of size-selected silicon nanocrystals
Thin films of silicon nanocrystals (Si-nc) were produced by laser pyrolysis of silan and accumulated on various substrates. Layer growth, optical properties, charge transport, photoluminescence (PL) and electroluminescence (EL) were investigated on these porous layers. A stick-ball model for layer …
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Growth and characterization of FeSi nanowires by chemical vapor deposition for gas sensing applications
… at a temperature of 1100oC to interact with silicon substrates which served as the silicon source. The nanowires followed the vapor solid (VS) growth mechanism, which does not require the use of a metal catalyst; the native silicon oxide layer on the silicon substrates played the role of the …
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A transmission electron microscopy study of inert gases in silicon and iron
… a study of inert gas inclusion in iron and silicon, as a result of ionimplantation. The effect of ion implantation conditions on the formation anddevelopment of inert gas bubbles within these solids has been explored, and the mobilityof these nanoscale bubbles during heating has been …
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Efficient power coupling to waveguides in high index contrast systems
… communicate via high index contrast waveguides. Silicon nitride (SixNy) and silicon oxynitride (SixOyNz) waveguides with silicon oxide cladding can be used to guide light on a chip because they have small dimensions, low scattering loss, and can be fabricated with silicon-based technology. With …
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Feature profile evolution during the high density plasma etching of polysilicon
… circuits - the plasma etching of thin polysilicon films used to form the metaloxide- semiconductor transistor gate. The etching of very small features (-0.25 jim) in the -2500 A thick films, performed at low operating pressures (-10 mTorr), must be accompanied with minimal etching artifacts …
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