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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 170 for “"silicon dioxide"”.
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Area selective atomic layer deposition of silicon dioxide on silicon dioxide using surface passivation of copper non-growth surface
The continuous downscaling of electronic devices to < 10 nm over the years has led to many integration challenges in the fabrication processes. Top-down techniques like photolithography are cost intensive and lead to alignment challenges such as edge placement errors which add additional steps in …
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Stress Induced Deformations of Thin Silicon Dioxide Films
The behavior of compressive silicon dioxide films deposited by magnetron sputtering, on PMMA, a low Tg polymer, were also studied. SiO2 films exhibited a linear increase in the surface roughness for deposited thickness below ∼10 nm; larger thickness showed an almost unchanged roughness. Since …
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Optical properties of nanostructured silicon-rich silicon dioxide
… a study of the optical properties of sputtered silicon-rich silicon dioxide (SRO) thin films with specific application for the fabrication of erbium-doped waveguide amplifiers and lasers, polarization sensitive devices and devices to modify the polarization state of light. The SRO thin films …
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Mobility and Saturation Velocity in Graphene on Silicon Dioxide
Transport properties of exfoliated graphene samples on SiO2 are examined from four-probe electrical measurements combined with electrical and thermal modeling. Data are analyzed with practical models including gated carriers, thermal generation, “puddle” charge, and Joule heating. Graphene mobility …
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Optically induced metastable defect states in amorphous silicon dioxide
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1986.
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Mixed-Phase Solidification of Thin Silicon Films on Silicon Dioxide
In this thesis, we present a new beam-induced melt-mediated crystallization process called mixed-phase solidification (MPS) that can produce defect-free, large-grain polycrystalline-Si films with strong (100)-surface texture (>99%) on SiO2. Such a combination of microstructural attributes makes the …
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Experimental Studies of Laterally Seeded Recrystallized Polysilicon on Silicon Dioxide
Single crystal silicon films have been grown on silicon dioxide covered silicon substrates by lateral epitaxy by seeded solidification using a scanned graphite strip heater.
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Alternative chemistries for etching of silicon dioxide and silicon nitride
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.
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Investigations of Electron Scattering Mechanisms at the Silicon - Silicon-Dioxide Interface
Made available in DSpace on 2015-05-12T21:41:56Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7020957.PDF: 4655744 bytes, checksum: f9dd506b5c1e261c939f094a9be8b7f2 (MD5) Previous issue date: 1970
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Phase Studies in the Titanium-Dixoide - Zirconium-Dioxide Silicon-Dioxide System
Made available in DSpace on 2014-12-05T22:56:59Z (GMT). No. of bitstreams: 1 0009108.pdf: 3125635 bytes, checksum: 90bd3b936569359ad4f76e447b531824 (MD5) Previous issue date: 1954
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Investigations of electron scattering mechanisms at the silicon-silicon dioxide interface
… scattering mechanisms of electrons at the silicon-silicon dioxide interface. Theoretical surface conductivity mobility in a semiconductor space-charge region for the temperature range 1000K to 4000K was calculated using a classical Boltzmann-Fuchs equation with constant field and constant …
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Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films
Ta205 and Si02 thin films, deposited at room temperature by ion-beam sputtering (IBS) and dual ion-beam sputtering (DIBS), and Si02 films, deposited by reactive e-beam evaporation and ion-assisted deposition, were studied. The energy (150-600 eV) and ion-to-atom arrival ratio (0.27-2.0) of …
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Oxide Charge Traps and Interface States at the Silicon - Silicon-Dioxide Interface
Made available in DSpace on 2015-05-13T15:22:19Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 8009184.PDF: 5184720 bytes, checksum: 9aa13487b79c46fe3257d939d46ae56b (MD5) Previous issue date: 1979
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Oxide charge traps and interface states at the silicon-silicon dioxide interface
… traps support the model that equates trivalent silicon with the trap with the larger hole capture cross section and non-bridging oxygen with the trap with the smaller hole capture cross section. An analysis of the annealing kinetics is given.
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Studies of trap generation in silicon-dioxide and electromigration in aluminum thin films
… hydrogenation rate of the boron acceptor in the silicon surface layer and increases the density of the peaked interface trap at 0.3 eV above the silicon midgap. A new chlorine-related, positively-charged electron trap in the oxide is observed and isolated from the chlorine-independent, …
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The Impact of Atomic Hydrogen on the Properties of the Silicon/Silicon Dioxide Interface
… dry oxidations were used...Immersion of oxidised silicon samples in mineral acids resulted in a modification to the Si and SiO2 interface properties. It could also provide a very cheap, alternative means of surface passivation due to hydrogen or a hydrogen complex diffusing into the oxide layer …
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The Impact of Atomic Hydrogen on the Properties of the Silicon/Silicon Dioxide Interface
… dry oxidations were used...Immersion of oxidised silicon samples in mineral acids resulted in a modification to the Si and SiO2 interface properties. It could also provide a very cheap, alternative means of surface passivation due to hydrogen or a hydrogen complex diffusing into the oxide layer …
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Scattering of Conduction Electrons by Surface Oxide Charge at the Silicon - Silicon-Dioxide Interface
Made available in DSpace on 2015-05-12T22:38:48Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7212416.PDF: 3912850 bytes, checksum: c1e9103a17e8dfe47ca70796d4a4dfb7 (MD5) Previous issue date: 1971
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Scattering of Conduction Electrons by Surface Oxide Charge at the Silicon-Silicon Dioxide Interface
Submitted by Jesse Garrison (jagarris@illinois.edu) on 2011-07-08T17:56:44Z No. of bitstreams: 1 1971_tschopp.pdf: 4081394 bytes, checksum: 8f7a857b43bf06c2a7b8ba1fc7c71451 (MD5)
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Studies of Field -Induced Stress on Ultrathin Layers of Silicon Dioxide on a Silicon Substrate
… here the results of an STM study of ultrathin silicon dioxide layers on a silicon substrate. We have found that under certain conditions, structures subjected to field-induced stress with the STM exhibit changes in their conductivity which we believe are evident in the images as the voltage of …
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