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Showing 1 to 8 of 8 for “"silicon controlled rectifier"”.

  1. A protection scheme for alternator fields

    … transistor oscillator in conjunction with a silicon-controlled rectifier form a detection and relay circuit for voltages appearing across the field of a three-phase alternator generated by negative-phase-sequence currents due to unbalanced conditions. Readings were taken of the times required …

    vt Repository record for A protection scheme for alternator fields (opens in a new tab)

  2. Uncalibrated TCAD methodology for analysis of ESD protection devices

    … methodology is then applied to ESD protection silicon controlled rectifier (SCR) devices to identify physical causes for high overshoot of a certain SCR layout, and to verify proposed improvements. The performance of the SCR with the improved layout structure is characterized in silicon to …

    uiuc Repository record for Uncalibrated TCAD methodology for analysis of ESD protection devices (opens in a new tab)

  3. A counterpulsed, solid-state opening switch

    … successfully tested. This circuit consisted of Silicon Controlled Rectifier components, which can nominally only turn on current. The counterpulsed configuration allowed them to function as opening switches and to do so at much higher current relative to their specifications. We demonstrated …

    nps Repository record for A counterpulsed, solid-state opening switch (opens in a new tab)

  4. Applying mass and energy balances to model series and parallel fan-powered terminal units.

    … motors: permanent split capacitor motors with silicon controlled rectifier control and electronically commutated motors. Fan sizes ranged from approximately 250 to 3500 ft³/min (0.118 to 1.65 m³/s) and motor sizes ranged from one-third to one hp (248.6 to 745.7 W). A mass and energy balance …

    baylor Repository record for Applying mass and energy balances to model series and parallel fan-powered terminal units. (opens in a new tab)

  5. Charged device model electrostatic discharge protection and test methods for integrated circuits

    … The effectiveness of diode vs. diode-triggered silicon controlled rectifier (DTSCR) protection in high-speed I/O cells is examined. The industry standard for CDM characterization of a product is field-induced CDM (FICDM) testing of packaged ICs. However, several wafer-level CDM testers have also …

    uiuc Repository record for Charged device model electrostatic discharge protection and test methods for integrated circuits (opens in a new tab)

  6. Design And Characterization Of Noveldevices For New Generation Of Electrostaticdischarge (esd) Protection Structures

    … of the high-holding, low-voltage-trigger, silicon controlled rectifier (SCR) (HH-LVTSCR) is demonstrated for implementing ESD solutions in commercial low-voltage digital and mixed-signal applications developed using complementary metal oxide semiconductor (CMOS) and bipolar CMOS (BiCMOS) …

    ucf

  7. Design of Novel Devices and Circuits for Electrostatic Discharge Protection Applications in Advanced Semiconductor Technologies

    … Especially in the manufacturing process, the silicon wafer turns out to be a functional ICs after numerous physical, chemical and mechanical processes, each of which expose the sensitive and fragile ICs to ESD environment. In normal end-user applications, ESD from human and machine handling, …

    ucf

  8. Modeling and numerical methods for power electronic devices

    A scalable I-V model for latch-up in non-collinear PNPN devices is adapted from a previous model for collinear SCR devices. The model is applied to 14-nm FinFET test structures. Layout scaling trends for key latch-up metrics, such as holding and trigger voltage, are captured by the model in circuit …

    uiuc Repository record for Modeling and numerical methods for power electronic devices (opens in a new tab)