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Showing 1 to 8 of 8 for “"silicon carbide MOSFET"”.
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Series-Connection of Silicon Carbide MOSFET Modules using Active Gate-Drivers with dv/dt Control
… scaling feasibility of several low voltage SiC MOSFET modules operated as a single series-connected switch using active gate control. Both multilevel and two-level topologies are capable of achieving higher blocking voltages in high-power converter applications. Compared to multilevel …
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Design and Validation of a High-Density 10 kV Silicon Carbide MOSFET Power Module with Reduced Electric Field Strength and Integrated Common-Mode Screen
… medium-voltage systems due to the development of silicon carbide power devices with voltage ratings exceeding 10 kV. The ability of these devices to switch higher voltages faster and with lower losses than existing semiconductor technologies will drastically reduce the size, weight, and complexity …
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Simulation of SiC MOSFET Power Converters
… discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter). Different parameters and scenarios were discussed and implemented for both silicon and silicon carbide MOSFET cases. A comparison between same …
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High Efficiency IGBTs through Novel Three-Dimensional Modelling and New Architectures
… into a coordinated switching scheme using both a silicon IGBT and silicon-carbide MOSFET was undertaken, which aimed to improve turn-off losses within the IGBT without sacrificing on-state losses. Thermal modelling of the power devices switching under inductive load was explored as the system was …
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Field-Grading in Medium-Voltage Power Modules Using a Nonlinear Resistive Polymer Nanocomposite Coating
Medium-voltage silicon carbide power devices, due to their higher operational temperature, higher blocking voltage, and faster switching speed, promise transformative possibilities for power electronics in grid-tied applications, thereby fostering a more sustainable, resilient, and reliable …
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Active Source Management to Maintain High Efficiency in Resonant Conversion over Wide Load Range
… a dc input voltage, two input inductors, and two MOSFETs. The topology is termed as a boost amplifier. If the amplifier operates away from the synchronous frequency, detrimental current spikes will flow though the switches since the series diodes are eliminated. Current spikes reduce the …
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Condition monitoring of SiC MOSFETs on LLC resonant converter
Silicon carbide (SiC) MOSFETs are widely acknowledged for low loss, fast switching and remarkable thermal conductivity compared to silicon (Si) counterparts. SiC-based power electronic converters, therefore, are optimal when operated at medium voltage to high voltage in high switching frequency …
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Hard Switched Robustness of Wide Bandgap Power Semiconductor Devices
… tests that were developed for legacy silicon (Si) technologies. However, new devices have been commercialized using wide bandgap (WBG) semiconductors including silicon carbide (SiC) and gallium nitride (GaN). These new devices promise enhanced capabilities (e.g., higher switching …