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Showing 1 to 1 of 1 for “"silicon cabide, p-n junction diode, ion irradiation, point defects, defect clustering"”.
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Effects of ion irradiation on 4H- SiC p-n junction
… operating in hostile environment such as radiation rich and high temperature. Ion irradiation affects the electrical performance of different kind of 4H-SiC based devices with a subsequent increase in the electrical resistance, leakage current and with a reduction in doping concentration, …