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Showing 1 to 5 of 5 for “"silicon III"”.

  1. Transfer Printing and Micro-Scale Hybrid Materials Systems

    … nanotubes, metal thin films, single-crystal silicon and III-V semiconductor microstructures and devices, few-layer graphene, and silica microspheres. Presented here are the techniques for preparing printable materials elements and devices from solution (e.g. surfactant stabilized aqueous …

    uiuc Repository record for Transfer Printing and Micro-Scale Hybrid Materials Systems (opens in a new tab)

  2. Tailoring angular and spectral behaviour in perovskite optoelectronic devices

    … and have been explored in materials such as silicon, III-V semiconductors, organic compounds, 2-dimensional materials, and quantum dots, showing great promise for tunability, flexibility, and enhanced performance. When combined with the emerging class of metal halide perovskites—known for …

    cambridge Repository record for Tailoring angular and spectral behaviour in perovskite optoelectronic devices (opens in a new tab)

  3. Surface states on the cleaved (III) silicon surface

    … vi ty changes resulting when sing.le crystal silicon is cleaved in ultrahigh vacuum have been measured parallel to the cleavage plane over various temperature ranges for gold dope~ and high.resistivity boron doped silicon. The resulting change of conductivity is related to the difference …

    uiuc Repository record for Surface states on the cleaved (III) silicon surface (opens in a new tab)

  4. Materials and design strategies for solar microcells

    … in the ultraviolet portion of the spectrum where iii the down-shifting material is active. The mechanisms by which the down-shifting material affects cell performance are reviewed and further improvements to solar devices implementing down-shifting materials are also discussed. Optical elements …

    uiuc Repository record for Materials and design strategies for solar microcells (opens in a new tab)

  5. Lattice mismatched compound semiconductors and devices on silicon

    III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and the degradation of IIIV MOSFET channel mobility remain two major challenges for …

    mit Repository record for Lattice mismatched compound semiconductors and devices on silicon (opens in a new tab)