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Investigation of 'high-k' materials as alternative dielectrics for AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MISHFET)

Heidelberger, GeroPublikationsserver der RWTH Aachen University2009

Gallium Nitride (GaN) based heterostructure field-effect transistors (HFET) are promising devices for high-power applications at high frequencies, as to be found in communication technology. The devices benefit from the properties GaN has to offer, namely a wide bandgap, a high carrier mobility and …

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