Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 53 for “"short-channel"”.
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A new inverse-modeling-based technique for sub-100-nm MOSFET characterization
… the fabrication process, strongly determine the short channel effects, which ultimately limit device operation and performance. In order to suppress short-channel effects, extensive use of non-uniform doping profiles are found in modem devices. Among these are the super-steep retrograde (SSR) …
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A comparison of electrical performance analysis between nanoscale double-gate and gate-all-around nanowire mosfet
… scaled down, several problems arise such as the short-channel effect, excessive transistor gate leakage and power consumption. The purpose of this simulation work is to compare the performance of Double-Gate and Gate-All-Around and study the effect of scaling physical dimension on devices …
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Highly Scaled p-GaN-gate HEMTs for Low Voltage Power Electronics
… structure was developed with considerations for short channel effects. A self-aligned, gate-first process employing tungsten metallization was implemented to enable gate lengths as small as 100 nm. Device scaling was studied systematically, revealing the importance of gate aspect ratio and …
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Hole transport in strained SiGe-channel MOSFETs : velocity in scaled devices and mobility under applied mechanical strain
… in transistor performance. Novel CMOS channel materials and device architectures are one option for enhancing carrier transport and increasing device performance. In this work strained SiGe and Ge are examined as a means of increasing the drive current in deeply scaled CMOS. As part of …
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Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques
… is facing great challenges to overcome severe short-channel effects. Multigate MOSFETs are one of the most promising candidates for scaling beyond Si CMOS, due to better electrostatic control as compared to conventional planar MOSFETs. Conventional dry etching-induced surface damage is one of …
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Design of a High Speed Mixed Signal CMOS Mutliplying Circuit
… a mixed-signal CMOS multiplier implemented with short-channel PMOS transistors. The multiplier presented here forms the product of a differential input voltage and a five-bit digital code. A TSMC 0.18 µm MOSFET model is used to simulate the circuit in Cadence Design Systems. The research …
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Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications
… characteristics, the adoption of alternate channel materials with low bandgap with superior transport properties will play a crucial role to improve the computation ability of the standard integrated circuit (IC). The requirement of high-mobility channel materials allows the industry to …
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Tunneling and ferroelectric based transistors for energy efficient electronics
… Systems-on-a-Chip (SoC's) applications. As the channel length of transistors has shrunk over the years, short-channel effects have become a major limiting factor to transistor miniaturization. Atomically thin MoS₂ is an ideal semiconductor material for field-effect transistors (FETs) with …
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Three-Dimensional Granular Monte Carlo Simulation of Semiconductor Devices
… combined P3M-EMC method is tested for large and short channel-length silicon MOSFETs and results are compared with continuum simulations in 2D and 3D. The results indicate that classical short-range Coulomb methods such as the P3M-EMC method can match bulk mobilities and kinietic energies …
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Physical Modeling of Graphene Nanoribbon Field Effect Transistor Using Non-Equilibrium Green Function Approach for Integrated Circuit Design
… The quantum transport model fully treats short channel-length electrostatic effects and the quantum tunneling effects, leading to the technology exploration of graphene nanoribbon field effect transistors (GNRFETs) for the future. A comprehensive study of static metrics and switching …
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Integration of pentacene-based thin film transistors via photolithography for low and high voltage applications
… temperatures. With surface treatments and back channel encapsulation for patterning, OTFTs having two distinct threshold voltages (VT > 0 V and VT < 0 V) are integrated into logic inverters and ring oscillators based on logic inverters. To assess how BZN can serve as a gate dielectric in OTFTs, …
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Experimental Study and Modeling of the GM-I Dependence of Long-Channel Mosfets
… and ALD1107 show sufficiently pronounced ‘short-channel’ effects to render the ACM inadequate. As a byproduct of this effort, we confirmed the modified ACM equation. With an m factor of approximately 0.6, it captures the I-gm dependence with sub-28% maximum error and sub-10% average error. …
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A compact transport and charge model for GaN-based high electron mobility transistors for RF applications
… a physics-based compact model is developed for short channel GaN HEMTs. The model is based on the concept of virtual source (VS) transport originally developed for scaled silicon field effect transistors. Self-consistent current and charge expressions in the model require very few parameters. …
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Silicon on Ferroelectric Insulator Field Effect Transistor (SOFFET): A Radical Alternative to Overcome the Thermionic Limit
… the power supply. Further scaling increases short-channel-effect (SCE), and off-state current makes it difficult for the industry to follow the well-known Moore’s Law with bulk devices. Therefore, scaling planar MOSFET is no longer considered as a feasible solution to extend this law. The …
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Design of CMOS Four-Quadrant Gilbert Cell Multiplier Circuits in Weak and Moderate Inversion
… mismatch, threshold mismatch, body effect, and short channel effects, is important to provide a linear multiplier. It is also shown that distortion caused by device size mismatch and offset input currents can be used to cancel the distortion introduced by drift currents when designing in weak …
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Monte Carlo study of current variability in UTB SOI DG MOSFETs
… difficult into the nanometer regime due to short channel effects, tunneling and subthreshold leakage current. Ultra-thin body silicon-on-insulator based architectures offer a promising alternative, alleviating these problems through their geometry. However, the transport behaviour in these …
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Effect of MOSFET threshold voltage variation on high-performance circuits
… in threshold voltage variation due to worsening short channel effect. This thesis will address three specific circuit design challenges arising from increased threshold voltage variation and present prospective solutions. First, with supply voltage scaling, control of die-to-die threshold voltage …
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