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Showing 1 to 13 of 13 for “"semiconductor nanowire"”.

  1. Technology and market evaluation for semiconductor nanowire transistors

    … Silicon being the material of choice of the semiconductor industry, it is highly desirable to have silicon one dimensional channel in the Gate-All- Around transistor. Silicon nanowires have been fabricated using various methods, in this work Self-Limiting-Oxidation was analyzed for its …

    mit Repository record for Technology and market evaluation for semiconductor nanowire transistors (opens in a new tab)

  2. Fabrication and photonics properties of III-V semiconductor nanowire structures

    <p>III-V semiconductor nanowires (NWs) have shown great potential to be building blocks for optical, optoelectronic, and electronic devices due to their special transverse confinement of electrons and photons along the nanowire axis. In addition, semiconductor nanowires with subwavelength …

    purdue-thes Repository record for Fabrication and photonics properties of III-V semiconductor nanowire structures (opens in a new tab)

  3. Au nanorods-semiconductor nanowire hybrid nanostructures : nanofabrication techniques and optoelectronic properties

    … and characterization of novel Au nanorod-semiconductor nanowire hybrid nanostructures. I provide a comprehensive bottom-up approach in which, starting from the synthesis and theoretical investigation of the optical properties of Au nanorods, I design, nanofabricate and characterize Au …

    cork Repository record for Au nanorods-semiconductor nanowire hybrid nanostructures : nanofabrication techniques and optoelectronic properties (opens in a new tab)

  4. Orientation Controllable Epitaxial Vapor-Liquid-Solid Semiconductor Nanowire Synthesis on Silicon Substrate

    <p>Semiconductor nanowires synthesized via the vapor-liquid-solid (VLS) mechanism have attracted extensive research interest in recent years owing to their unique structure as a promising candidate for the future electronic devices. Germanium and silicon nanowires, in particular, are compatible …

    purdue-thes Repository record for Orientation Controllable Epitaxial Vapor-Liquid-Solid Semiconductor Nanowire Synthesis on Silicon Substrate (opens in a new tab)

  5. Self-seeded II-V semiconductor nanowire growth by metal-organic chemical vapor deposition (MOCVD)

    III-V semiconductor epitaxial nanowires have gained significant attention in recent years, as they showcase an opportunity to combine III-V material properties with a non-planar morphology. To date, semiconductor devices have been continuously engineered to realize optoelectronic devices with ever …

    mit Repository record for Self-seeded II-V semiconductor nanowire growth by metal-organic chemical vapor deposition (MOCVD) (opens in a new tab)

  6. Heterogeneous Metallurgical Patterning of Semiconducting Oxide Nanostructures

    … brass (Cu70Zn30 alloy) in ambient conditions, semiconductor nanostructure networks composed of CuO nanofilm and ZnO nanowires have been successfully fabricated. The dezincification induced by metallographic etching on Cu70Zn30 polycrystalline alloy surface created heterogeneous networks …

    uconn-diss Repository record for Heterogeneous Metallurgical Patterning of Semiconducting Oxide Nanostructures (opens in a new tab)

  7. Evaluation of potential applications for templated arrays of heterostructural semiconductor nanowires as light emitting devices

    … for use of templated arrays of heterostructural semiconductor nanowire light emitting devices, from both engineering and business points of view. The effects of wire spacing and diameter on reliability and performance (both the internal quantum efficiency and the extraction efficiency) are …

    mit Repository record for Evaluation of potential applications for templated arrays of heterostructural semiconductor nanowires as light emitting devices (opens in a new tab)

  8. Array-based planar nanowire high electron mobility transistor

    III-V semiconductor nanowire (NW) field-effect transistors (FETs) are strong candidates for future low-power digital/RF IC. Bottom-up grown NWs via the vapor-liquid-solid (VLS) mechanism are of particular interest for NW-FET application because the as-grown 3D NW structures require no lithography …

    uiuc Repository record for Array-based planar nanowire high electron mobility transistor (opens in a new tab)

  9. Growth and application of planar III-V semiconductor nanowires grown with MOCVD

    The semiconductor nanowire has been widely studied over the past decade and identified as a promising nanotechnology building block with application in photonics and electronics. The flexible bottom-up approach to nanowire growth allows for straightforward fabrication of complex 1D nanostructures …

    uiuc Repository record for Growth and application of planar III-V semiconductor nanowires grown with MOCVD (opens in a new tab)

  10. Addressing performance bottlenecks for top-down engineered nanowire transistors

    … Novel one-dimensional (1D) structures such as semiconductor nanowires (NWs) are considered to be promising structures for nanoscale devices and circuits. In this thesis, several approaches have been investigated in order to address the performance bottlenecks and to further enhance the …

    nus Repository record for Addressing performance bottlenecks for top-down engineered nanowire transistors (opens in a new tab)

  11. Controlled Lasing in Gallium Nitride Nanowires

    … coherent light sources. A strong candidate is a semiconductor-nanowire laser, where a single, monolithic nanowire functions simultaneously as an optical microcavity and active medium, leading to an extremely compact and robust laser. Recent advances in nanowire synthesis have enabled realization …

    unm Repository record for Controlled Lasing in Gallium Nitride Nanowires (opens in a new tab)

  12. Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy

    Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2021-12-01

    uiuc Repository record for Bottom-up growth of III-V compound semiconductor nanowires by selective lateral/area epitaxy (opens in a new tab)

  13. Vertical InAs Nanowire Devices and RF Circuits

    … architecture. In this thesis, MOSFETs based on nanowires, are investigated. Taking advantage of the nanowire geometry, the gate can be wrapped all-around the nanowires for excellent control of the channel. The nanowires are made in a high-mobility III-V semiconductor, InAs, allowing for faster …

    lund Repository record for Vertical InAs Nanowire Devices and RF Circuits (opens in a new tab)