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Showing 1 to 2 of 2 for “"semiconductor intermixing"”.
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
… made from HgCdTe alloys. These narrow-bandgap semiconductors exhibit favourable optoelectronic properties, however fabrication challenges lead to extravagant costs. In comparison, mature fabrication processes are available for III-V materials. Interband photodetectors made from these compounds …
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
… made from HgCdTe alloys. These narrow-bandgap semiconductors exhibit favourable optoelectronic properties, however fabrication challenges lead to extravagant costs. In comparison, mature fabrication processes are available for III-V materials. Interband photodetectors made from these compounds …