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Showing 1 to 20 of 26 for “"semiconductor heterostructures"”.
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High Performance Broadband Photodetectors Based on Graphene/Semiconductor Heterostructures
… that is based on graphene/two-dimensional heterostructures. The homogeneous thickness and the large contact of the heterostructure give rise to fast carrier transporting between the thin absorber layer and the graphene, leading to a fast response time. This thesis carefully investigates the …
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Experimental Observation of Geometric Phases in Narrow-Gap Semiconductor Heterostructures
… interferometers in high-quality narrow-gap semiconductor (NGS) heterostructures. The low effective-mass electrons in NGS heterostructures enable observation of delicate quantum phases; and the strong spin-orbit interaction (SOI) in the systems gives us means by which we can manipulate the …
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Carrier momentum relaxation in highly doped polar semiconductors and semiconductor heterostructures
Highly doped polar semiconductors are essential components of today’s semiconductor industry. Most strikingly, transistors in modern electronic devices are polar semiconductor heterostructures. It is important to thoroughly understand carrier transport in such structures. In doped polar …
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Characterization of III-V compound semiconductor heterostructures grown by metalorganic chemical vapor deposition
III-V compound semiconductor materials have had much attention because of their application to high speed electronic and optoelectronic devices. For achieving these purposes, it is required to produce high quality samples with uniform layer thickness, no defects, and abrupt interfaces. For this …
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Spectroscopic characterization of dry etch-induced modification in III-V semiconductors and semiconductor heterostructures
… structural and electrical properties of III-V semiconductors and semiconductor heterostructures were studied using vibrational and electronic Raman spectroscopy and low and room temperature photoluminescence spectroscopy. The frequency, intensity, and lineshape of the dipole-allowed and …
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Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures
… x}$Ga$\sb{\rm 1-x}$As-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs), and in related III-V quantum well heterostructures, has developed extensively. A large variety of experimental data on IILD are discussed and provide newer information and further perspective on …
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Carrier excitations and nonlinear optical effects in semiconductor quantum wells
… investigate the nonlinear optical properties of semiconductor quantum-well devices. The generation of terahertz electromagnetic pulses from ultrafast optical pulse excitations of semiconductor heterostructures is studied in the time domain with a three-level model. Coupled optical Bloch equations …
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Device Physics of Two-Dimensional Crystalline Materials
… has two milestones: quantum Hall effects in semiconductor heterostructures and superconductivity in cuprates. In both, the 2D electrons are embedded in complex material structures. The discovery of graphene allows for the isolation of 2D electrons in their simplest form, existing merely in a …
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Design, fabrication, and characterization of low-dimensional quantum devices
… realization of a two-dimensional electron gas in semiconductor heterostructures due to advanced epitaxial growth techniques has led to novel high-speed devices such as modulation-doped field effect transistors and quantum well lasers. High resolution lithography and pattern transfer techniques now …
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Numerical simulation of a laterally confined double dot with tunable interaction potential
… electrons called quantum dots. Often kept within semiconductor heterostructures, these systems are small enough that the electrons within them occupy states with discrete energy levels. Two single quantum dots can be placed next to each other so as to form a double dot, with a host of special …
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Lattice Relaxation by Plastic Flow and Study of Apparent Critical Layer Thickness in II-VI/GaAs(001) Heterostructures
… model for lattice relaxation by plastic flow in semiconductor heterostructures. It is applicable to graded and multilayered structures, allows for changes of temperature or growth rate, and accounts for differential thermal expansion. For the implementation of this model we consider an arbitrary …
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Optical Properties of Type III-V Semiconductor Spherical Quantum Dot Heterostructures
… electronic structure and optical properties of semiconductor heterostructures. Our emphasis will be on type III-V semiconductors. Such structures, have a great potential for increasing efficiencies, but they also possess highly degenerate and complex valence band structures. Therefore, we seek …
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Controlled growth and doping of core-shell GaAs-based nanowires
The use of compound semiconductor heterostructures to create electron confinement has enabled the highest frequency and lowest noise semiconductor electronics in existence. Modem technology uses two-dimensional electron gasses and there is considerable interest to explore one-dimensional electron …
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Low temperature Kerr effect study of magnetic topological insulators and other magnetic structures
… calculation. Apart from TIs, several ferromagnet/semiconductor heterostructures are investigated for spin transport experiments, including $L1_0$-FePt/MgO/GaAs and [Co/Pt]$_n$/GaAs. None of them show promising magnetisation features for the further pursuit of spin injection into semiconductors. …
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Nanostructures for Coherent Light Sources and Photodetectors
… with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient light emission as well as broadband photodetection from silicon in extending the silicon technology into fully integrated optoelectronic circuits. Recent …
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Predictive simulation and design of III-V heterostructures for light emission and detection
Semiconductor heterostructures have been long established for a variety of applications, particularly in photonic devices such as light-emitting diodes (LEDs) and lasers, in addition to photodetectors and optical amplifiers. Predictive simulations are key to support the development of these …
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DC, RF, and Thermal Characterization of High Electric Field Induced Degradation Mechanisms in GaN-on-Si High Electron Mobility Transistors
… GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller …
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Properties of Type-II ZnTe/ZnSe Submonolayer Quantum Dots Studied via Excitonic Aharonov-Bohm Effect and Polarized Optical Spectroscopy
… of optical and magneto-optical processes in semiconductor nanostructures and introduce the experimental methods in Chapters 1 - 3.</p> <p>In Chapter 4 I focus on the excitonic AB effect in the type-II QDs. I develop a lateral tightly-bound exciton model for ZnTe/ZnSe type-II QDs, using …
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Low-dimensional electron transport and surface acoustic waves in GaAs and ZnO heterostructures
… electron transport and SAWs in GaAs and ZnO semiconductor heterostructures. The ability to pattern quantum nanostructures using gates has stimulated intense interest in research into mesoscopic physics. We have performed a series of simulations of gate structures, and having with the …
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