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Showing 1 to 10 of 10 for “"semiconductor heterojunction"”.

  1. Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices

    … to manufacture an entirely new class of heterojunction devices. Physical properties of semiconductor heterojunction devices such as resonant tunneling and ballistic transport and various hot electron effects discussed within, have been moved from the status of academic curiosity to …

    uiuc Repository record for Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices (opens in a new tab)

  2. Growth of a silicon-gallium phosphide heterojunction by liquid and vapour phase epitaxial techniques.

    As the innovation of the semiconductor industry proceeds the semiconductor heterojunction is playing an increasingly important part. One such heterojunction, the silicon/gallium phosphide crystal, however, is still in early stages of investigation. If gallium phosphide epitaxial layers can he grown …

    rgu Repository record for Growth of a silicon-gallium phosphide heterojunction by liquid and vapour phase epitaxial techniques. (opens in a new tab)

  3. Temperature effects on the electronic properties of lead telluride (PbTe) and the influence of nano-size precipitates on the performance of thermoelectric materials. (SrTe precipitates in PbTe bulk material)

    … the relative alignment of energy bands at the semiconductor heterojunction. The crystal shape of the SrTe precipitates in the PbTe host matrix was evaluated from the interface energies using the Wulffman construction. We also attempted to develop a relation between the interface energies and …

    vt Repository record for Temperature effects on the electronic properties of lead telluride (PbTe) and the influence of nano-size precipitates on the performance of thermoelectric materials. (SrTe precipitates in PbTe bulk material) (opens in a new tab)

  4. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications

    … high performance circuits composed of compound semiconductor heterojunction bipolar transistors (HBTs). The subject of this work is the design and fabrication of HBTs based on InP and the III-V compounds compatible with epitaxial growth on this substrate. The hot electron injection effect is …

    uiuc Repository record for Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications (opens in a new tab)

  5. Ultra-scaled III-V Vertical Tunneling Transistors

    … We focus on the most promising group III-V semiconductor heterojunction structure, the broken-band GaSb/InAsSb system, in a vertical nanowire (VNW) TFET configuration. We first develop a new technology for ultra-scaled GaSb/InAsSb VNW fabrication, reaching a diameter as small as 5 nm. We …

    mit Repository record for Ultra-scaled III-V Vertical Tunneling Transistors (opens in a new tab)

  6. Core-Level Photoemission Investigations of the Cadmium-Telluride(100) and Indium-Antimony(100) Surface and Interfacial Structures

    … the clean (100) surfaces of the zinc-blende semiconductor materials CdTe and InSb. Several interfacial systems involving the surfaces of these materials were also studied, including the CdTe(100)-Ag interface, the CdTe(100)-Sb system, and the InSb(100)-Sn interface. High-energy electron …

    uiuc Repository record for Core-Level Photoemission Investigations of the Cadmium-Telluride(100) and Indium-Antimony(100) Surface and Interfacial Structures (opens in a new tab)

  7. Core-level photoemission investigations of the CDTE(100) and INSB(100) surface and interfacial structures

    … the clean (100) surfaces of the zinc-blende semiconductor materials CdTe and InSb. Several interfacial systems involving the surfaces of these materials were also studied, including the CdTe(lOO)-Ag interface, the CdTe(lOO)-Sb system, and the InSb(lOO)-Sn interface. High-energy electron …

    uiuc Repository record for Core-level photoemission investigations of the CDTE(100) and INSB(100) surface and interfacial structures (opens in a new tab)

  8. Fabrication and Characterization of ZnO/CuO Core-Shell Nanowire Arrays

    … property. However, to form a <em>p-type</em> ZnO semiconductor is still a challenge. Copper oxide (CuO), compared to ZnO, has a much smaller band gap, 1.2 eV, and shows an intrinsically <em>p-type</em> semiconducting property. It has been suggested that when CuO is alloyed with ZnO properly, a …

    uconn-diss Repository record for Fabrication and Characterization of ZnO/CuO Core-Shell Nanowire Arrays (opens in a new tab)

  9. Band engineering of metal oxide heterostructures for catalysis applications

    … Most metal oxides are (wide band-gap) semiconductors and hence a semiconductor heterojunction is formed when one oxide is deposited on another. This conception of supported oxide catalysts allows for the use of heterojunction physics to predict the electron richness at the surface of …

    uiuc Repository record for Band engineering of metal oxide heterostructures for catalysis applications (opens in a new tab)

  10. NONLINEAR AND ULTRAFAST OPTICAL STUDIES OF INTERFACIAL PROCESSES IN PHOTOVOLTAIC NANOMATERIALS

    … Another prominent example is the metal/semiconductor heterojunction systems. While it has been demonstrated that such mixed systems can significantly improve solar conversion efficiency, the mechanism of the electron dynamics driving these systems remains controversial. This stems in …

    temple Repository record for NONLINEAR AND ULTRAFAST OPTICAL STUDIES OF INTERFACIAL PROCESSES IN PHOTOVOLTAIC NANOMATERIALS (opens in a new tab)