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Showing 1 to 15 of 15 for “"semiconductor alloys"”.
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Optical study of indium phosphate related semiconductor alloys
ETDs are only available to UIUC Users without author permission
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Electronic and optical properties of semiconductor alloys and superlattices
Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-02T18:04:23Z No. of bitstreams: 1 1986_ting.pdf: 8054944 bytes, checksum: c0ebc579813f805c94d27b704d6370c4 (MD5)
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Optical study of InP related semiconductor alloys;spectroscopic ellipsometry
… matched (AlxGa1_x)o.sino.sP grown on GaAs semiconductor alloys with assistance from measurements of Raman spectroscopy and transmission electron microscopy. Our studies of InxGal-xP/(GaAs, graded GaP) and (AlxGal-x)o.sino.sP/GaAs heteroepitexiallayers principally demonstrate the efficacy of …
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Mechanical, electronic and optical properties of multi-ternary semiconductor alloys
… properties with composition makes multi-ternary alloys extremely useful for a variety of applications in semiconductor devices and is of significant interest in experimental and theoretical research. This dissertation investigates the mechanical, electronic and optical properties of …
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Properties of thin film III-V/IV semiconductor alloys and nanostructures
… engineering materials for the next generation of semiconductor devices with high performance, energy efficiency, and economic viability. To this end, significant efforts have been made to grow semiconductor thin films with the desired properties onto lattice constants with viable, cost effective …
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Tunneling in the Iii-v Semiconductor Alloys Indium Gallium Phosphide, Gallium Aluminum Arsenide, and Gallium Arsenide Phosphide
Made available in DSpace on 2014-12-10T19:06:52Z (GMT). No. of bitstreams: 1 7212254.pdf: 3159809 bytes, checksum: 3806fd4032e22d4e943204391b117cec (MD5) Previous issue date: 1971
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Properties of the Nitrogen Isoelectronic Trap in the III-V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide
Submitted by Carly Hafner (chafner2@illinois.edu) on 2014-06-06T16:20:02Z No. of bitstreams: 1 1972_Scifres.pdf: 1983799 bytes, checksum: af0bafc6b6a5f1fddded6b4a13be36ac (MD5)
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Properties of the Nitrogen Isoelectronic Trap in the Group-Iii-v Semiconductor Alloys Gallium-Arsenide-Phosphide and Indium-Gallium-Phosphide
Made available in DSpace on 2014-12-10T19:07:05Z (GMT). No. of bitstreams: 1 7310045.pdf: 3083676 bytes, checksum: de2e080db9dfaaaaf257ff7b657b551c (MD5) Previous issue date: 1972
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TDDFT calculations for excitation spectra of solids and superstructures utilizing mGGA
… new generation of materials, such as organic semiconductors and long polymer chains, as well as understanding of physical properties of nanoparticles , inorganic semiconductors and semiconductor alloys. In this work, we start from the Kohn-Sham one-particle equation Schr¨odinger equation and …
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Automated Variable Temperature Hall Effect Measurements and Analysis of N-Type Gallium-Arsenide, Indium-Phosphide and Their Lattice Matched Alloy Semiconductors (Hall Effect)
… n-type GaAs, InP, and their related direct gap semiconductor alloys is presented along with a thorough treatment of those factors affecting the measurement. The design and construction of the equipment used to make measurements from 4.2 K to 373 K are described. The programming required both for …
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Soft x-ray near edge spectroscopy of cuprous oxide and silicon-germanium alloys
… have been obtained for CU20 and for SiGe1-x semiconductor alloys, xas a function of composition x, using the methods of partial electron yield and thin film absorption. The shapes of the near edge features provide a unique fingerprint of the local crystal structure (symmetries, coordinations, …
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Heat transport by phonons in crystalline materials and nanostructures
… the dominant heat carriers in most crystalline semiconductor nanostructures. Two primary tools for the studies presented in this dissertation are time-domain thermoreflectance (TDTR) for measurements of thermal conductivity of nanostructures and thermal conductance of interfaces; and …
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Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication
… by the means of photovoltaic cells. III-nitride alloys show promise for these applications due to their generally good transport properties and ability to withstand high power applications. Along with these, this family of semiconductor alloys has a direct bandgap energy range (0.7-6.2 eV) which …
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Raman scattering in mixed crystal semiconductors
… inelastic light scattering by phonons in three semiconductor alloys; (GaSbh-x(Ge2)x, GaAsxSbl-x' and AlxGal-xAs. We measure the asymmetric broadening and shifting of the longitudinal optic (LO) phonon lines as a function of disorder and observe scattering from disorder-activated longitudinal …
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Theory of the electronic and optical properties of dilute bismide alloys
Dilute bismide alloys, containing small fractions of bismuth (Bi), have recently attracted interest due to their potential for applications in a range of semiconductor devices. Experiments have revealed that dilute bismide alloys such as GaBixAs1−x, in which a small fraction x of the atoms in the …